Ortlieb, ErhardSchad, HanspeterLassmann, Kurt2009-10-072016-03-312009-10-072016-03-311976317909304http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-46801http://elib.uni-stuttgart.de/handle/11682/6733http://dx.doi.org/10.18419/opus-6716The ultrasonic attenuation in Ge (Ga, In) has been measured in the frequency range from 500 MHz to 2.5 GHz, and from room temperature down to 1 K. Below 10 K the attenuation rises as ω2/T. For the first time saturation of the attenuation has been observed for ground state of a shallow acceptor. These results can be interpreted as due to resonance interaction with level splittings of a broad distribution with width of about 0.1 meV.eninfo:eu-repo/semantics/openAccessDämpfung , Ultraschall , Akzeptor <Halbleiterphysik>530Ultrasonic attenuation due to resonant interaction with a distribution of level splittings of the ground state of shallow acceptors in Gearticle