Berroth, ManfredBosch, RolandHurm, Volker2014-05-122016-03-312014-05-122016-03-311989411955128http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92609http://elib.uni-stuttgart.de/handle/11682/8222http://dx.doi.org/10.18419/opus-8205A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel.eninfo:eu-repo/semantics/openAccessGalliumarsenid , Aluminiumarsenid , Mischkristall , Feldeffekttransistor , Integrierte Schaltung621.3conferenceObject