Schellander, YannickWinter, MariusSchamber, MauriceMunkes, FabianSchalberger, PatrickKuebler, HaraldPfau, TilmanFruehauf, Norbert2023-10-182023-10-1820231071-09221938-36571869935454http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-136575http://elib.uni-stuttgart.de/handle/11682/13657http://dx.doi.org/10.18419/opus-13638In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP.eninfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/4.0/621.3article2023-07-12