Wolfstädter, BerndTrebin, Hans-RainerPascher, HaraldHäfele, Hans-Georg2016-01-182016-03-312016-01-182016-03-311988456199608http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-104810http://elib.uni-stuttgart.de/handle/11682/8450http://dx.doi.org/10.18419/opus-8433Stimulated recombination radiation and spin-flip Raman scattering have been observed in InSb with uniaxial stress Tapplied perpendicular to a magnetic field B Tǁ[100] Bǁ[001. A k·p Hamiltonian was established within an 8 x 8 Kane model and diagonalized exactly for this particular geometry. Energy levels, transition energies, and corresponding oscillator strengths were calculated and compared to the experimental data.eninfo:eu-repo/semantics/openAccessHalbleiter , Magnetfeld , Raman-Effekt530article