Lang, ManfredNowotny, UlrichBerroth, Manfred2014-05-052016-03-312014-05-052016-03-311991406376336http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92500http://elib.uni-stuttgart.de/handle/11682/8209http://dx.doi.org/10.18419/opus-8192An ultrahigh speed 4 bit demultiplexer circuit has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3 mu m gate length. First results show a data rate of 11.6 Gbit/s and a power consumption of 165 mW at 0.85 V supply voltage, including four 50 Omega buffers.eninfo:eu-repo/semantics/openAccessMultiplexer , Galliumarsenid-Feldeffekttransistor , Integrierte Schaltung621.311.6 Gbps 1:4 demultiplexer using double pulse doped quantum well GaAs/AlGaAs transistorsarticle