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http://dx.doi.org/10.18419/opus-8231
Autor(en): | Berroth, Manfred Bosch, Roland |
Titel: | High frequency equivalent circuit of GaAs depletion and enhancement FETs for large signal modelling |
Erscheinungsdatum: | 1990 |
Dokumentart: | Konferenzbeitrag |
Erschienen in: | Digest of papers / Workshop on Measurement Techniques for Microwave Device Characterization and Modelling, Stuttgart, April 23, 1990. Stuttgart, 1990, S. 122-127 |
URI: | http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92685 http://elib.uni-stuttgart.de/handle/11682/8248 http://dx.doi.org/10.18419/opus-8231 |
Zusammenfassung: | For the design of digital circuits as well as for power amplifiers, the nonlinear modelling of GaAs FETs is a necessity. We use an extended equivalent circuit, which takes into account the gate current of positive biased transistors as well as the symmetrical nature of the devices at low drain voltages. A fast method to determine the elements of the equivalent circuit from measured S-parameters is presented which delivers for the first time good agreement for all operating points. A valid large signal description of the device can be obtained by implementing the bias dependences of the intrinsic elements into a circuit simulator like SPICE. |
Enthalten in den Sammlungen: | 15 Fakultätsübergreifend / Sonstige Einrichtung |
Dateien zu dieser Ressource:
Datei | Beschreibung | Größe | Format | |
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ber24.pdf | 2,38 MB | Adobe PDF | Öffnen/Anzeigen |
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