Browsing by Author "Mebert, Joachim"

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    High frequency phonon transmission through amorphous films
    (1990) Mebert, Joachim; Maile, Bernd; Eisenmenger, Wolfgang
    We now report on phonon spectroscopy measurements in the frequency range from 300 GHz - 1 THz on thin amorphous films of several materials (i.e. e-beam evaporated SiO2., α-Si and α-Ge). Some films were prepared in a residual gas atmosphere as H20 and N2.
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    Phonon absorption-spectroscopy in the presence of strong elastic phonon scattering
    (1986) Mebert, Joachim; Koblinger, Otto; Döttinger, Siegfried; Eisenmenger, Wolfgang
    In this work we show that in the presence of a strong phonon scattering background absorption structures can only be well resolved by reducing sample thickness to the phonon mean free path. This mean free path can be determined by analyzing the pulse shape of 285 GHz phonons. By reducing sample thickness to the appropriate value of 0,3mm the 21,2 cm -1 crystalline field transition in CaF 2:Er 3+ could be evaluated with the very high resolution of 5 GHz. In experiments performed on a 1mm thick LaF 3 Er 3+ sample we observed an absoption line at 14,2 cm -1 not visible in FIR absorption measurements.
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    Phonon spectroscopy measurements at amorphous films
    (1994) Mebert, Joachim; Eisenmenger, Wolfgang
    Phonon spectroscopy measurements were used to examine the scattering of high frequency phonons (300 GHz-1 THz) in amorphous materials. The experiments were done with the use of time and frequency resolved measurements of the phonon transmission behaviour through amorphous single films of different thicknesses. The typical film thicknesses were of the order of 10 nm. In contrast to the pure amorphous semiconductors Si and Ge our experiments show inelastic phonon scattering processes in the case of SiO 2 and Si:H. This inelastic phonon scattering also occurs when the pure semiconductors Si and Ge are prepared in an O 2 or H 2 atmosphere, but is missing when the preparation process is done in an N 2 atmosphere. In films of the pure semiconductors a-Si and a-Ge we only found evidence to elastic scattering processes. In further experiments at heated a-Si:H samples we could examine the atomical bonded hydrogen to be the center of the inelastic phonon scattering.