Browsing by Author "Mortan, Claudiu"

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    Top‐down approach to study chemical and electronic properties of perovskite solar cells : sputtered depth profiling versus tapered cross‐sectional photoelectron spectroscopies
    (2021) Das, Chittaranjan; Zia, Waqas; Mortan, Claudiu; Hussain, Navid; Saliba, Michael; Ingo Flege, Jan; Kot, Małgorzata
    A study of the chemical and electronic properties of various layers across perovskite solar cell (PSC) stacks is challenging. Depth‐profiling photoemission spectroscopy can be used to study the surface, interface, and bulk properties of different layers in PSCs, which influence the overall performance of these devices. Herein, sputter depth profiling (SDP) and tapered cross‐sectional (TCS) photoelectron spectroscopies (PESs) are used to study highly efficient mixed halide PSCs. It is found that the most used SDP‐PES technique degrades the organic and deforms the inorganic materials during sputtering of the PSCs while the TCS‐PES method is less destructive and can determine the chemical and electronic properties of all layers precisely. The SDP‐PES dissociates the chemical bonding in the spiro‐MeOTAD and perovskite layer and reduces the TiO2, which causes the chemical analysis to be unreliable. The TCS‐PES revealed a band bending only at the spiro‐MeOTAD/perovskite interface of about 0.7 eV. Both the TCS and SDP‐PES show that the perovskite layer is inhomogeneous and has a higher amount of bromine at the perovskite/TiO2 interface.
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    Understanding the impact of surface roughness : changing from FTO to ITO to PEN/ITO for flexible perovskite solar cells
    (2023) Holzhey, Philippe; Prettl, Michael; Collavini, Silvia; Mortan, Claudiu; Saliba, Michael
    So far, single-junction flexible PSCs have been lacking in efficiency compared to rigid PSCs. Recently, > 23% have been reported. We therefore focus on understanding the differences between rigid and flexible substrates. One often neglected parameter is the different surface roughness which directly affects the perovskite film formation. Therefore, we adjust the layer thickness of SnO2 and the perovskite layers. Furthermore, we introduce a PMMA layer between the perovskite and the hole transporting material (HTM), spiro-MeOTAD, to mitigate shunting pathways. In addition, the multication perovskite Rb0.02Cs0.05FA0.77MA0.16Pb(I0.83Br0.17)3 is employed, resulting in stabilized performances of 16% for a flexible ITO substrate and 19% on a rigid ITO substrate.