Browsing by Author "Söderholm, Svante"

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    Cs deposition on c-axis-oriented thin films of α-(BEDT-TTF)2I3: evidence for electron doping and intercalation
    (1994) Söderholm, Svante; Loppinet, Benoit; Schweitzer, Dieter
    The deposition of Cs on c-axis-oriented thin films of α-(BEDT-TTF)2I3 causes a shift of the chemical potential in agreement with addition of electrons to the system. At high Cs doses a chemical reaction between Cs+ and I3- occurs, with the formation of CsI and probably mainly I2. In the valence-band regime new structures appear, due to I- ,i.e, CsI, and molecular orbitals of I2 derived from I 5p. The hybridization between these orbitals and the BEDT-TTF orbitals is negligible. The remarkable changes in the I 4d spectrum caused by Cs deposition can be understood within the framework of the proposed chemical reaction.
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    A photo emission study of c-axis-oriented thin films of α-(BEDT-TTF)2I3
    (1994) Söderholm, Svante; Loppinet, Benoit; Schweitzer, Dieter
    Highly c-axis-oriented thin films of α-(BEDT-TTF)2I3 have been prepared by physical vapour deposition. Structural and morphological characterization are performed by X-ray diffraction and scanning electron microscopy. In situ photoemission experiments on the films reveal five distinct features in the valence-band regime; the two structures with the lowest binding energies are assigned to molecular orbitals present in the TTF backbone. None of the valence-band structures shows dispersion along the Γ-Z(k2) direction. The spectral intensity is zero at, and to within 0.5 eV of the Fermi level. Core-level spectroscopy on the I 4d level indicates that all iodine is present as I3-ions and that the surface consists of BEDT-TTF molecules.