14 Externe wissenschaftliche Einrichtungen
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Item Open Access Reinforcement of precursor-derived Si-(B-)C-N ceramics with carbon nanotubes(2005) Katsuda, Yuji; Aldinger, Fritz (Prof. Dr.)Incorporation of carbon nanotubes (CNTs) into the precursor-derived Si-(B-)C-N ceramics has been investigated for the reinforcement of the materials. Different types of CNTs consisting of multi-wall (MW) and single-wall (SW) were examined as the reinforcement of the Si-(B-)C-N ceramics to make a comparison of the effect. Mechanical properties demonstrated in the Si-(B-)C-N/CNT nanocomposites have been discussed in connection with their microstructural features characterized by scanning electron (SEM) and transmission electron microscope (TEM). Other material properties of the nanocomposites as revealed on the thermal stability and the crystallization behavior have been also considered in relation to the microstructural characteristics of the nanocomposites. Dense Si-C-N/CNT nanocomposites containing different types of MWCNTs were successfully prepared by casting of a mixture of MWCNTs and a liquid precursor polymer followed by cross-linking and thermolysis. In these processes, the sonication for deagglomeration and dispersion of CNTs in the precursor polymer as well as the thermolysis condition for ceramization of the cross-linked precursor/CNT nanocomposites was examined to obtain homogeneously CNT distributed Si-C-N ceramics. Fracture toughness behavior of the Si-C-N/CNT nanocomposites has been evaluated by a thermal loading technique on the disc shaped materials. The results reveal a dependence of the fracture toughness on the type of the MWCNTs. The MWCNTs showing high integrity in the tube structure exhibit a remarkable increase in the fracture toughness at the CNT content of 1 – 2 mass %, whereas the other ones possessing amorphous nature exhibits no effect. The microstructural analyses at the fracture surfaces have demonstrated different features of CNTs between both nanocomposites, where pulling out and breaking of CNTs are considered to be reasons for the observed fracture toughness increase. No significant influences observed on the material properties of the Si-C-N/CNT nanocomposites besides the toughening indicates that CNTs can simply work as the reinforcement for the Si-C-N ceramics. SWCNTs incorporation into the Si-C-N materials has revealed toughening effect with similar microstructural features to the MWCNT reinforced Si-C-N nanocomposites. In this system, it was found that the deagglomeration and debundle of the SWCNTs are major issues to make the best use of SWCNTs as the reinforcements. Concerning the Si-B-C-N/CNT nanocomposites, preparation processes via a casting and a warm pressing from different types of boron-containing precursors have been investigated to produce rigid MWCNT nanocomposites. The observed pulling out and breaking CNTs structure at the fracture surfaces of the Si-B-C-N/CNT nanocomposites indicate the toughening effect of CNTs similar to Si-C-N/CNT ceramics. Moreover, the interaction between CNTs and the matrix has appeared to be changed with increasing thermolysis temperature. However, the crystallization of the Si-B-C-N matrix and the deterioration of thermal stability have been disclosed in the Si-B-C-N/CNT nanocomposites. It is revealed that embedded CNTs have an effect to accelerate or to generate nucleation sites for the crystallization of Si-B-C-N matrix.Item Open Access Low temperature sintering additives for silicon nitride(2003) Matovic, Branko; Aldinger, Fritz (Prof. Dr.)Pressureless sintering of Si3N4 with two new additives based on the Li2O-Y2O3 system (LiYO2) and on the Li2O-Al2O3-SiO2 system (LiAlSiO4) were investigated in this study. Experiments were conducted in the areas of powder processing, sintering optimization, phase transformation characterization and microstructural development. Sintered materials were characterized by fracture toughness and thermal diffusivity measurements. The experimental results are summarized in the following: Using three different mechanical mixing processes (attrition milling, ball milling and vibratory milling) for the introduction of additives (LiYO2) into Si3N4 powders, the best results are obtained for attrition milling. This method yields a good dispersion of the additive powder in fine unagglomerated Si3N4 without contamination. It also yields good sintering characteristics. For the LiYO2 system, the densification depends largely on the content of sintering additive. A larger amount of additive means a higher volume of liquid phase, which is favorable for efficient particle rearrangement resulting in higher values of density rate. In case of the LiAlSiO4 additive, it is found that the densification is less dependent on the additive content. The overall sintering kinetics at the low temperatures is less retarded when using the LiYO2 additive in comparison to the LiAlSiO4 additive, resulting in higher densities obtained at lower temperatures and shorter annealing times. With prolonged heating time, the differences in the degree of densification become smaller. The kinetics of phase transformation in the both systems are found to be of first order. In the LiYO2 system, the transformation rate constant increases with increasing additive content. While the opposite behavior is noticed in case of the LiAlSiO4 additive, i.e. the rate constant decreases with higher additive content. The phase transformation is always completed at a later stage than the densification. The lag between the two phenomena in the sintering process is more pronounced with the Li2O-Al2O3-SiO2 additive system. The alpha to beta Si3N4 transformation is accompanied by grain growth. Upon prolongation of the annealing time the grain size and the morphology of the growing beta-Si3N4 particles are significantly changed from equiaxed to elongated. The grain growth becomes anisotropic, leading to rod-like betaƒ{Si3N4 crystals. The growth rate is higher in the LiYO2 system than in the LiAlSiO4 system. At 1600„aC, the microstructure of Si3N4 ceramics sintered with both the additives is characterized by a homogeneous distribution of elongated beta Si3N4 grains and glassy phase located in thin layers at grain boundaries and at triple points. The maximum values obtained for fracture toughness are 6.8 and 6.2 for the materials sintered with LiYO2 and LiAlSiO4 additives, respectively, at 1600„aC for 8 h. The higher value of fracture toughness in the LiYO2 system is attributed to its microstructure with a higher aspect ratio of the elongated beta-Si3N4 grains. Thermal conductivity of the material sintered with the LiYO2 additive is higher in comparison to that sintered with LiAlSiO4 additive. In the LiAlSiO4 system, partial dissolution of Al3+ in the beta-Si3N4 grains results in increasing phonon scattering and hence decreases the thermal conductivity.Item Open Access Segregation and phase transformations at interfaces(2004) López, Gabriel Alejandro; Mittemeijer, Eric Jan (Prof. Dr. Ir.)Important properties of metallic materials are strongly influenced by the behavior of interfaces, e.g. grain boundaries and free surfaces. Therefore the understanding of processes, which can change this behavior, have become of great importance from both the theoretical and the practical point of view. To these processes belong the grain boundary and surface segregation, the discontinuous precipitation as well as the grain boundary wetting. A particular goal of this work was to investigate the grain boundary and surface segregation in the Cu-Bi system under exactly the same conditions. The diffusivities of moving grain boundaries was determined in the Cu-In system applying, for the first time, a local analysis of growth kinetics of the discontinuous precipitation reaction. The Al-MG and Al-Zn systems were studied systematically regarding grain boundary wetting, in order to find an explanation for the enormous superplastic behavior of alloys based on these systems. The grain boundary and surface segregation were studied in the Cu-Bi system under identical conditions by using a special sample preparation procedure. After annealing of the samples at temperatures between 1073 and 1223 K segregation of Bi at grain boundaries and internal free surfaces in Cu bicrystals was accomplished. For the first time, Bi segregation at free surfaces was determined under equilibrium conditions. The segregation of Bi at the free surfaces was clearly stronger than at the grain boundaries. The morphology and kinetics of the discontinuous precipitation reaction were comprehensively studied in a Cu-4.5 At,% in alloy. Special attention was given to the determination of the concentration gradients remaining in the solute-depleted matrix. The grain boundary diffusion coefficient was determined applying a local interpretation of growth kinetics and thus the discrepancy between two differently models was eliminated. Finally the wetting behavior in Al-Mg and Al-Zn alloys was studied by a metallographic investigation. With this purpose cross-sections of samples with different compositions, which had been annelaed at different temperatures, were prepared and examined afterwards. The wetting behavior plays a substantial role regarding the mechanical characteristics of these alloys. For the first time, the formation of a second solid layer at the grain boundaries was disccussed in terms of wetting by a solid phase. During the accomplished investigations the possibilities of the analytic transmission electron microscopy were mainly used. Concentration profiles within nm range could be determined thanks to the high resolution of this technique. Furthermore Auger electron spectroscopy, light and scanning electron microscopy, as well as microanalysis and X-ray diffraction analyses were used, in order to achieve the above-mentioned goals of this work.Item Open Access Precipitation of nitrides in iron-based binary and ternary alloys; influence of defects and transformation-misfit stresses(2015) Akhlaghi, Maryam; Mittemeijer, Eric Jan (Prof. Dr. Ir.)The initial microstructure of the unnitrided specimen has a significant influence on the nitriding response of binary Fe-Me (Me: Mo or Al) alloys specimens. This effect was not investigated until now for the case of nitrided ternary Fe-Me1-Me2 alloys, the role of the initial microstructure was studied upon nitriding Fe-4.1 at.% Cr-7.9 at.% Al specimens. To this end, the recrystallized and cold-rolled specimens were nitrided at low nitriding temperature of 400 °C. Upon precipitation of misfitting coherent nitrides during nitriding of thin-foils of binary Fe-Me (Me: Cr and V) alloys, a hydrostatic tensile lattice-stain component results from the elastic accommodation of volume misfit of nitrides and ferrite matrix. The change of the ferrite-matrix lattice parameter can be traced upon precipitation of the nitrides by X-ray diffraction measurements. The theory originally developed for the case of imperfections (by Eshelby) in solids can be applied for quantitatively describing the lattice-parameter changes of the matrix, the nitrides and the aggregate (matrix+ nitrides) as function of volume fraction and type of nitrides.Item Open Access Fatigue of Al thin films at ultra high frequencies(2005) Eberl, Christoph; Arzt, Eduard (Prof. Dr. phil.)Ultra high-cycle fatigue at frequencies in the GHz regime leads to a characteristic void and extrusion formation in patterned metal thin films. Resulting from the microstructural damage formation a significant degradation in form of a shift of the resonance frequency and failures by short circuits in Surface Acoustic Wave (SAW) test devices take place. To study fatigue at ultra high cycles, SAW test devices were used to test continuous and patterned Al thin films at ultra high frequencies. For stress amplitudes as low as 14 MPa lifetime measurements showed no fatigue limit for 400 nm Al thin films. The resulting damage sites appeared in regions of cyclic stress concentration as identified by Finite Element Analysis. In situ measurements revealed that the characteristic extrusion/void formation mechanism operates on a short time scale. The post-test analysis of microstructural changes reveals extrusion and void formation concentrated at grain boundaries. This finding and the observed grain growth indicates a high material flux at the grain boundaries induced by the cyclic load. Quantitative analysis also shows a correlation between extrusion density and electrical devices performance. This direct correlation shows a functional agreement with a common theory on the influence of crack density on intrinsic stresses in thin metal films. Advanced Finite Element (FEM) calculations simulate very well the sensitivity of the resonance frequency to damage structure in interconnects such as cracks, voids and extrusions. The experimentally observed linear correlation between damage density and frequency shift is reproduced by the FEM model. The estimation of the short circuit probability from the extrusion length distribution revealed an exponential dependency on the electrode distance. The observed damage formation is explained by the combined action of dislocation motion and stress-induced diffusion processes.Item Open Access Towards spin injection into silicon(2007) Dash, Saroj Prasad; Carstanjen, Heinz Dieter (Prof. Dr.)The efficient spin injection into semiconductors could pave the way to a new generation of electronics devices such as spin memories, spin transistors, and spin quantum computers. The most important semiconductor for industrial application, Si has been studied for the purpose of spin injection extensively in this thesis. Three different concepts for spin injection into Si have been addressed: (1) spin injection through a ferromagnet-Si Schottky contact, (2) spin injection using MgO tunnel barriers in between the ferromagnet and Si, and (3) spin injection from Mn-doped Si (DMS) as spin aligner. (1) FM-Si Schottky contact for spin injection: In a heterostructure of a ferromagnetic thin film on a Si substrate, any structural disorder at the interface would drastically reduce the spin polarization at the interface and, hence, the spin injection efficiency. To be able to improve the interface qualities one needs to understand the atomic processes involved in the formation of such silicide phases. In order to obtain more detailed insight into the formation of such silicide phases the initial stages of growth of Co and Fe were studied in situ by HRBS with monolayer depth resolution. As understood, it was important to prohibit the in-diffusion of Co into interstitial sites at the initial stages of growth and the out-diffusion of Si atoms in the latter stages. So in order to control and improve the interface, equilibrium growth conditions were followed (i) by lowering the growth temperature and (ii) by surfactant-mediated growth. Low temperature growth of Co on Si (100): Already at very low coverage Co diffusion into the bulk Si has been observed. The amount of in-diffused Co is, however, less than at room temperature. In contradiction to room temperature growth, Co atoms form layers of pure Co on top of the Si surface already at very low coverage. Every second Si layer, starting with the first Si layer, is Co depleted. This leads to an oscillatory Co distribution in the Si lattice which is preserved up to higher coverages (1.3 ML). Surfactant-mediated growth of Co on Si (100) : The lower surface free energy of Sb in comparison to Co and Si, makes it a potential candidate for surfactant mediated growth. By the use of one monolayer of Sb adsorbed on a Si (100) surface, Co-Si intermixing at the interface is strongly reduced in comparison to the interface without Sb as surfactant. The improved interface quality with Sb-mediated growth is also reflected in magnetic measurements. Co with Sb-mediated growth shows a higher magnetic moment. It was shown that simple solutions can reduce the FM-Si inter diffusion at the interface and improve the interface quality. However these non-equilibrium growth conditions could not stop the silicide formation completely. (2) MgO tunnel barrier for spin injection into Si: On the other hand, using an ultra-thin tunnel barrier between FM and Si will have three advantages: (i) form a chemical barrier between the FM and Si, (ii) circumvent the conductivity mismatch problem, and (iii) in addition act as a spin filter. The fabrication and characterization of ultra-thin crystalline MgO tunnel barriers on Si (100) was presented. Some of the important properties required for tunnel barriers on Si have been addressed. Ultra-thin stoichiometric MgO tunnel barriers with sharp interface with Si (100), very homogeneous, without pin-holes, and crystalline in structure could be fabricated by reactive molecular beam epitaxy. Co and Fe on an ultra thin MgO tunnel barrier were found to have island-like growth with a rough surface. Ultra-thin Co and Fe films are found to be thermally quite stable up to 450 °C. (3) Mn doped Si for spin injection: For spin injection purpose, instead of contacting the Si with a ferromagnetic metal, the contact could be made with another semiconductor, one with ferromagnetic properties. This solves the conductivity mismatch problem by ensuring that the resistivities of the materials on both side of the interface are comparable in magnitude. Si-based diluted magnetic semiconductor samples were prepared by doping Si with Mn by two different methods i) by Mn ion implantation and ii) by in-diffusion of Mn atoms (solid state growth). In the case of implanted samples, Mn atoms do not substitute Si sites. The implanted samples show room temperature ferromagnetism as measured by a SQUID magnetometer. The magnetic moment per Mn atom is found to decrease with increasing implantation dose. It has been observed that the implanted samples show carrier mediated ferromagnetism and, more importantly, mediated by both holes and electrons in contrast to statements in the literature. Solid state growth of Mn doped Si : For evaporation of Mn on Si (100), Mn atoms diffuse deep into the Si bulk already at room temperature, even for very low coverage (0.25 ML) with an oscillatory concentration depth profile as observed by HRBS with monolayer depth resolution. This results in natural MnxSi1-x/Si digital layers on the surface. Surprisingly, the samples prepared by this solid state diffusion process show room-temperature ferromagnetism having a magnetic moment of 1.8 µB per Mn atom, which is much higher than that of the ion-implanted samples. In contrast to ion-implanted samples the ferromagnetism in these samples does not show any carrier mediation.Item Open Access Formation of lath martensite(2015) Löwy, Sarah; Mittemeijer, Eric Jan (Prof. Dr. Ir.)In this thesis the formation of different lath martensites was investigated upon cooling, particularly with regard to the mechanisms contributing to the transformation process. Upon very slow cooling of different Fe-Ni alloys and a maraging steel, all forming lath martensite, a discontinuous transformation behaviour was observed. This modulation of the transformation rate is ascribed to the interplay of chemical driving force, developing strain energy and its relaxation upon slow cooling. It is proposed that the modulation is caused by simultaneous formation of blocks in different martensite packages. Additionally, the influence of the Ni content on the transformation behaviour is presented as well as the influence of an externally applied force.Item Open Access Hochtemperatur-Thermochemie im System Al-Cr-Ni-O(2003) Saltikov, Pavlo; Aldinger, Fritz (Prof. Dr.)Das System Al-Cr-Ni ist von großer Bedeutung in der Energieerzeugungs- und der Luftfahrttechnik als Basis für die Superlegierungen. Zur Steigerung des Wirkungsgrads einer Gasturbine müssen die neuen Herstellungstechniken (z.B. gerichtete Erstarrung) bzw. Konstruktionskonzepte (keramische Wärmedämmschichten) eingeführt werden, die den Betrieb bei höheren Verbrennungstemperaturen ermöglichen. Obwohl die Ni-Basis-Superlegierungen in den letzten Jahren sehr ausgiebig untersucht worden waren, bleiben immer noch viele offene Fragen bezüglich der Herstellung, des Betriebs und des Schutzes dieser Legierungen. In dieser Arbeit wurde ein Beitrag zum Verständnis dieser unterschiedlicher Aspekte geleistet. Da die auftretende Probleme sehr vielschichtig sind, wurden hier unterschiedliche Methoden der Thermochemie eingesetzt. Die für die Simulation der gerichteten Erstarrung notwendigen thermodynamischen Daten flüssiger Al-Cr-Ni-Legierungen wurden in dieser Arbeit bestimmt. Die partiellen Mischungsenthalpien flüssiger Al-Cr-Ni-Legierungen wurden mittels der Hochtemperatur-Mischungskalorimetrie gemessen. Die experimentelle Ergebnisse wurden ausgewertet und zur Ermittlung der Werte der integralen Mischungsenthalpie im ganzen Konzentrationsbereich verwendet. Zum Vergleich der Mischungsfunktionen wurden diese auch thermodynamisch berechnet. Weiterhin wurden die experimentellen Daten nach dem Assoziatmodell behandelt. Auf diese Weise wurden die Mischungsfunktionen sowie die thermodynamische Aktivitäten berechnet. Außerdem wurden die Beziehungen zwischen den thermodynamischen Funktionen und der chemischen Nahordnung in der Schmelze mit dem Assoziatmodell beschrieben. Aus diesen Untersuchungen hat sich ergeben, dass nur die schwache Wechselwirkungen zwischen den Spezies in binären Al-Cr- und Cr-Ni-Schmelzen vorliegen. Die stärkste chemische Nahordnung im System Al-Cr-Ni bei 1727 K wurde nahe der Zusammensetzung Al2Cr1Ni1 beobachtet. Es wurde festgestellt, dass die flüssigen Al-Ni-Legierungen eine größere Tendenz zur Bildung von chemischer Nahordnung als flüssige Cr-Ni- und Al-Cr-Legierungen aufweisen, was ein Grund für einen starken Einfluss des Al-Ni-Systems auf die Mischungsfunktionen in einem weiten Konzentrationsbereich darstellt. Um die Versagensursachen eines Wärmedämmschichtsystems besser zu verstehen, wurde die Oxidation einer Ni-Cr-Al-Haftvermittlerschicht bei 1373 K thermodynamisch modelliert. Die Berechnungen von lokalen Phasengleichgewichten haben Aufschlüsse darüber gegeben, in welcher Reihenfolge sich die Phasen in der Oxidschicht bilden. Dazu wurde in dieser Arbeit eine neue Art von Phasenmengendiagrammen vorgeschlagen. Sie wurden mit Hilfe von computergestützten thermodynamischen Berechnungen konstruiert und zur Erörterung der Grenzflächenreaktionen verwendet. Es wurde gezeigt, dass die Entstehung des (Al,Cr)2O3-Mischoxids und der Ni(Al,Cr)2O4-Spinell-Mischphase in den unteren bzw. mittleren Zonen der Oxidschicht sowie des Nickeloxids mit der Spinell-Mischphase in der Deckschicht des thermisch gewachsenen Oxids möglich ist. Es wurde auch gezeigt, dass das Al2O3 sich nur auf der Oberfläche der beta-reichen Körner bilden kann. Nach einer ausreichend langen Oxidationsdauer kommt es zur Al-Verarmung sowie zur Abschnürung der beta-Phase und zur Erhöhung der Anteile der gamma- und gamma'-Phasen im Oberflächenbereich der Haftvermittlerschicht.Item Open Access Resonante magnetische Röntgenuntersuchungen an einem Co/Cu/Co-Schichtsystem und an Platinlegierungen(2006) Grüner, Uwe; Schütz, Gisela (Prof. Dr.)Im Rahmen dieser Arbeit wurde das magnetische Tiefenprofil eines Co/Cu/Co-Schichtsystem mit Hilfe der resonanten magnetischen Röntgenreflektometrie (XRMR) untersucht. Dazu wurde als Funktion des Einfallswinkels das Asymmetrieverhältnis an der CoL3- und an der CuL3-Kante gemessen. Die zugehörigen resonanten optischen Konstanten wurden über ein gesondertes XMCD-Experiment ermittelt. Mit Hilfe eines neu entwickelten Programm auf der Basis des Parratt-Formalismus konnten die gemessenen Asymmetrien simuliert und quantitative Änderungen an den Grenzflächen der Kobaltschichten sowie induzierte magnetische Effekte im Kupfer ermittelt werden. Weiterhin wurden XMCD-Messungen an der PtL3-Kante durchgeführt. Mit Hilfe einer weiterentwickelten, auf digitaler Lock-In-Technik basierenden Methode mit einem Phasenschieber wurden drei verschiedene Platinlegierungen untersucht und der induzierte Magnetismus im Platin quantitativ bestimmt.Item Open Access Vortex-Kern-Korrelation in gekoppelten Systemen(2014) Jüllig, Patrick; Schütz, Gisela (Prof. Dr.)In der vorliegenden Arbeit wurden strukturierte ferromagnetische Dreischichtsysteme zum einen auf ihre statische in-plane- sowie out-of-plane-Magnetisierungsverteilung als auch auf deren dynamisches Verhalten hin untersucht. Die sowohl quadratischen als auch kreisförmigen Strukturen bestanden aus zwei ferromagnetischen Lagen mit einer Dicke von jeweils 50nm, welche durch eine nicht magnetische Cu-Zwischenschicht getrennt waren. Die Dicke dieser Zwischenschicht variierte schrittweise von t(Cu)=3nm bis 15nm. Als Magnetmaterialien kamen für die untere Schicht Kobalt (Co) und für die obere Schicht das magnetisch isotrope Permalloy (Ni80Fe20) zum Einsatz. Die lateralen Abmessungen sowie das Aspektverhältnis der beiden Einzelschichten wurden so gewählt, dass der Vortexzustand die stabile Domänenkonfiguration ist. Somit resultierten zwei vertikal übereinander angeordnete Vortexkonfigurationen, sodass deren Wechselwirkung sowohl im statischen als auch im dynamischen Fall untersucht werden konnte. Aufgrund der gewählten Cu-Schichtdicke von mindestens 3nm war gewährleistet, dass die Kopplung der in-plane-Schichtmagnetisierung hauptsächlich durch die elektrostatische Streufeldenergie beeinflusst wurde und somit der Beitrag der Oszillatorischen Zwischenschichtaustauschwechselwirkung vernachlässigt werden konnte. Im Falle zweier vertikal übereinander angeordneter Vortexstrukturen kann man bezüglich der Zirkulation C (beschreibt die Orientierung der in-plane-Magnetisierung) und der Polarisation P (beschreibt die Orientierung der out-of-plane-Komponente des Vortexkerns) unter Berücksichtigung der Symmetrie vier verschiedene Konfigurationen voneinander unterscheiden: Die beiden Fälle, bei denen C und P jeweils bzw. orientiert sind, sowie die beiden Fälle, bei denen lediglich C oder P parallel ausgerichtet ist. Der erste Schritt dieser Arbeit bestand in der Probenpräparation. Als Strukturierungsverfahren kamen zum einen das Ionenstrahlätzen und zum anderen die Elektronenstrahllithographie zum Einsatz. Anhand von Röntgenbeugungsexperimenten konnte herausgefunden werden, dass beide Schichtmaterialien, sowohl das Permalloy als auch das Kobalt, eine polykristalline, fasertexturierte Schichtstruktur mit einer fcc-Gitterstruktur aufwiesen. Diese Erkenntnisse waren vor allem für die korrekte Parameterwahl für die nachfolgend durchgeführten mikromagnetischen Simulationen von großer Bedeutung. Messungen der Oberflächenrauigkeiten mittels des AFM ließen darauf schließen, dass neben dem Beitrag der Streufeldenergie ebenso korrelierte bzw. unkorrelierte Zwischenschichtrauigkeiten zur gegenseitigen Ausrichtung der in-plane-Schichtmagnetisierungen beitrugen. Mit Hilfe von SQUID-Messungen bei T=40K an unstrukturierten Co/Cu/Py-Dreischichtsystemen konnte nachgewiesen werden, dass erst für Proben mit Cu-Schichtdicken ab t(Cu)=2,0nm beide ferromagnetische Materialien chemisch voneinander getrennt vorlagen und keine direkte ferromagnetische Kopplung aufgrund von sogenannten Pinholes auftrat. Somit konnte geschlussfolgert werden, dass erst ab einer Dicke von t(Cu) größer gleich 2,0nm eine vollständig geschlossene Cu-Schicht vorlag. Die ersten statischen in-plane-Messungen am STXM zeigten, dass Proben, welche im as-sputtered Zustand eine undefinierte metastabile Mehrdomänenkonfigurationen aufwiesen, durch einen Entmagnetisierungsprozess in den stabilen Vortexzustand überführt werden konnten. Neben antiparallel gekoppelten Systemen bezüglich der Zirkulation C wurden mit einer ähnlich hohen Wahrscheinlichkeit Proben mit einer parallelen Ausrichtung der in-plane-Magnetisierung gefunden. Dies zeigte, dass die Kopplung der Schichtmagnetisierungen nicht allein durch die Streufelder realisiert wurde, sondern ein weiterer Beitrag hinzukam, dessen Ursache mit hoher Wahrscheinlichkeit in den Zwischenschichtrauigkeiten zu finden war. Statische mikromagnetische Simulationen an quadratischen Co/Spalt/Py-Strukturelementen haben gezeigt, dass die in-plane-Magnetisierungsverteilung der Systeme mit C=parallel eine merklich verzerrte Landaustruktur aufwies. Zudem lag bei Konfigurationen mit P=antiparallel ein lateraler Shift bezüglich der Gleichgewichtspositionen der Kerne vor, was aufgrund der Interaktion der out-of-plane-Streufelder zu erwarten war. Dies spiegelte sich auch in der Energiebetrachtung wieder, wobei die beiden Systeme mit der Konfiguration C=parallel deutlich höhere Gesamtenergien aufwiesen als diejenigen mit C=antiparallel. Allgemein lagen im Falle von parallelen Kernpolarisationen die Energiewerte etwas niedriger als bei antiparallel ausgerichteten Kernen. Die dynamische Anregung der ferromagnetischen Schichtsysteme wurde experimentell mittels eines in-plane-Magnetfeldpulses realisiert, welcher durch die lineare Stripline generiert wurde. Die Pulsdauer betrug je nach Element 0,5 bis 1,6ns, und bezüglich der Pulsamplitude mussten Feldstärken von B(Puls)=3,1mT bis zu 6,0mT angelegt werden, um eine Gyrationsbewegung beobachten zu können.