Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-10896
Authors: Nitzsche, Maximilian
Cheshire, Christoph
Fischer, Manuel
Ruthardt, Johannes
Roth-Stielow, Jörg
Title: Comprehensive comparison of a SiC MOSFET and Si IGBT based inverter
Issue Date: 2019
metadata.ubs.publikation.typ: Konferenzbeitrag
metadata.ubs.konferenzname: PCIM Europe, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (2019, Nürnberg)
metadata.ubs.publikation.source: PCIM Europe 2019 : proceedings. Berlin : VDE Verlag, 2019. - ISBN 978-3-8007-4938-6, S. 1828-1834
URI: http://elib.uni-stuttgart.de/handle/11682/10913
http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-109135
http://dx.doi.org/10.18419/opus-10896
ISBN: 978-3-8007-4938-6
metadata.ubs.bemerkung.extern: Website der PCIM Europe: www.pcim-europe.com
Abstract: The investment which is necessary to replace Si IGBTs with SiC MOSFETs in medium to high power DC-AC inverters needs to be balanced carefully against the advantages SiC offers. This paper compares a 20 kW Si IGBT inverter with a 20 kW SiC MOSFET inverter. The power semiconductor components are operated identically in a modular half bridge module to ensure comparability. Thereby the measurement of the switching losses is explicitly not the focus but the overall efficiency while taking volume, current ripple, switching frequency and inductance into account. The limits of reasonable operating range shall be evaluated and an overview on the benefits of SiC on system level will be given.
Appears in Collections:05 Fakultät Informatik, Elektrotechnik und Informationstechnik

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