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http://dx.doi.org/10.18419/opus-14496
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DC Element | Wert | Sprache |
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dc.contributor.author | Sharbaf Kalaghichi, Saman | - |
dc.contributor.author | Hoß, Jan | - |
dc.contributor.author | Linke, Jonathan | - |
dc.contributor.author | Lange, Stefan | - |
dc.contributor.author | Werner, Jürgen H. | - |
dc.date.accessioned | 2024-06-12T08:06:42Z | - |
dc.date.available | 2024-06-12T08:06:42Z | - |
dc.date.issued | 2024 | de |
dc.identifier.issn | 1996-1073 | - |
dc.identifier.other | 1891292838 | - |
dc.identifier.uri | http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-145152 | de |
dc.identifier.uri | http://elib.uni-stuttgart.de/handle/11682/14515 | - |
dc.identifier.uri | http://dx.doi.org/10.18419/opus-14496 | - |
dc.description.abstract | Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time 𝑡anneal = 30 min and an annealing temperature 600 °C ≤ 𝑇anneal ≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature 𝑇anneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers. | en |
dc.description.sponsorship | Bundesministerium für Wirtschaft und Klimaschutz (BMWK) | de |
dc.language.iso | en | de |
dc.relation.uri | doi:10.3390/en17061319 | de |
dc.rights | info:eu-repo/semantics/openAccess | de |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | de |
dc.subject.ddc | 333.7 | de |
dc.title | Three-step process for efficient solar cells with boron-doped passivated contacts | en |
dc.type | article | de |
dc.date.updated | 2024-04-25T13:22:56Z | - |
ubs.fakultaet | Informatik, Elektrotechnik und Informationstechnik | de |
ubs.fakultaet | Fakultätsübergreifend / Sonstige Einrichtung | de |
ubs.institut | Institut für Photovoltaik | de |
ubs.institut | Fakultätsübergreifend / Sonstige Einrichtung | de |
ubs.publikation.seiten | 14 | de |
ubs.publikation.source | Energies 17 (2024), No. 1319 | de |
ubs.publikation.typ | Zeitschriftenartikel | de |
Enthalten in den Sammlungen: | 05 Fakultät Informatik, Elektrotechnik und Informationstechnik |
Dateien zu dieser Ressource:
Datei | Beschreibung | Größe | Format | |
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energies-17-01319.pdf | 3,19 MB | Adobe PDF | Öffnen/Anzeigen |
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