Bitte benutzen Sie diese Kennung, um auf die Ressource zu verweisen:
http://dx.doi.org/10.18419/opus-7056
Langanzeige der Metadaten
DC Element | Wert | Sprache |
---|---|---|
dc.contributor.author | Burger, Wilfried | de |
dc.contributor.author | Lassmann, Kurt | de |
dc.contributor.author | Holm, Claus | de |
dc.contributor.author | Wagner, Peter | de |
dc.date.accessioned | 2009-10-13 | de |
dc.date.accessioned | 2016-03-31T11:41:48Z | - |
dc.date.available | 2009-10-13 | de |
dc.date.available | 2016-03-31T11:41:48Z | - |
dc.date.issued | 1986 | de |
dc.identifier.other | 318047837 | de |
dc.identifier.uri | http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47143 | de |
dc.identifier.uri | http://elib.uni-stuttgart.de/handle/11682/7073 | - |
dc.identifier.uri | http://dx.doi.org/10.18419/opus-7056 | - |
dc.description.abstract | At low temperatures shallow neutral donors and acceptors in silicon can bind an extra carrier to form the so-called D- and A+ centers. With the method of phonon-induced electrical conductivity (PIC) we find the same threshold energies for the detachment of these carriers associated with the shallow impurities P and B, as have been obtained previously by FIR measurements. This shows that the detachment is by a one-phonon process. We find that there is no central cell correction for the binding to the deeper acceptors Al and Ga, whereas for In+ the binding energy is as large as 5,8 meV. We interprete this dependence on acceptor species as another example of the shallow-deep instability of the binding energy with the variation of the central cell potential. | en |
dc.language.iso | en | de |
dc.rights | info:eu-repo/semantics/openAccess | de |
dc.subject.classification | Silicium , Phononeninduzierte elektrische Leitfähigkeit | de |
dc.subject.ddc | 530 | de |
dc.title | Shallow traps correlated with deep impurities in silicon as obtained by phonon induced conductance | en |
dc.type | conferenceObject | de |
dc.date.updated | 2010-10-07 | de |
ubs.fakultaet | Fakultätsübergreifend / Sonstige Einrichtung | de |
ubs.fakultaet | Fakultät Mathematik und Physik | de |
ubs.institut | Sonstige Einrichtung | de |
ubs.institut | 1. Physikalisches Institut | de |
ubs.opusid | 4714 | de |
ubs.publikation.source | 18th International Conference on the Physics of Semiconductors, Stockholm, Sweden August 11 - 15, 1986. Bd. 2. Singapore, 1987, S. 851-854 | de |
ubs.publikation.typ | Konferenzbeitrag | de |
Enthalten in den Sammlungen: | 15 Fakultätsübergreifend / Sonstige Einrichtung |
Dateien zu dieser Ressource:
Datei | Beschreibung | Größe | Format | |
---|---|---|---|---|
las33.pdf | 126,66 kB | Adobe PDF | Öffnen/Anzeigen |
Alle Ressourcen in diesem Repositorium sind urheberrechtlich geschützt.