Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-7056
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dc.contributor.authorBurger, Wilfriedde
dc.contributor.authorLassmann, Kurtde
dc.contributor.authorHolm, Clausde
dc.contributor.authorWagner, Peterde
dc.date.accessioned2009-10-13de
dc.date.accessioned2016-03-31T11:41:48Z-
dc.date.available2009-10-13de
dc.date.available2016-03-31T11:41:48Z-
dc.date.issued1986de
dc.identifier.other318047837de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47143de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/7073-
dc.identifier.urihttp://dx.doi.org/10.18419/opus-7056-
dc.description.abstractAt low temperatures shallow neutral donors and acceptors in silicon can bind an extra carrier to form the so-called D- and A+ centers. With the method of phonon-induced electrical conductivity (PIC) we find the same threshold energies for the detachment of these carriers associated with the shallow impurities P and B, as have been obtained previously by FIR measurements. This shows that the detachment is by a one-phonon process. We find that there is no central cell correction for the binding to the deeper acceptors Al and Ga, whereas for In+ the binding energy is as large as 5,8 meV. We interprete this dependence on acceptor species as another example of the shallow-deep instability of the binding energy with the variation of the central cell potential.en
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationSilicium , Phononeninduzierte elektrische Leitfähigkeitde
dc.subject.ddc530de
dc.titleShallow traps correlated with deep impurities in silicon as obtained by phonon induced conductanceen
dc.typeconferenceObjectde
dc.date.updated2010-10-07de
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.fakultaetFakultät Mathematik und Physikde
ubs.institutSonstige Einrichtungde
ubs.institut1. Physikalisches Institutde
ubs.opusid4714de
ubs.publikation.source18th International Conference on the Physics of Semiconductors, Stockholm, Sweden August 11 - 15, 1986. Bd. 2. Singapore, 1987, S. 851-854de
ubs.publikation.typKonferenzbeitragde
Appears in Collections:15 Fakultätsübergreifend / Sonstige Einrichtung

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