Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-8195
Authors: Hurm, Volker
Benz, Willi
Berroth, Manfred
Fink, Thomas
Fritzsche, Daniel
Haupt, Michael
Hofmann, Peter
Köhler, Klaus
Ludwig, Manfred
Mause, Klaus
Raynor, Brian
Rosenzweig, Josef
Title: 1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Issue Date: 1994
metadata.ubs.publikation.typ: Konferenzbeitrag
metadata.ubs.publikation.source: Technical digest / International Electron Devices Meeting 1994. Piscataway, NJ : IEEE, 1994. - ISBN 0-7803-2111-1, S. 935-937
URI: http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92477
http://elib.uni-stuttgart.de/handle/11682/8212
http://dx.doi.org/10.18419/opus-8195
Abstract: The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 kΩ. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.
Appears in Collections:15 Fakultätsübergreifend / Sonstige Einrichtung

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