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http://dx.doi.org/10.18419/opus-8210
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DC Element | Wert | Sprache |
---|---|---|
dc.contributor.author | Hurm, Volker | de |
dc.contributor.author | Rosenzweig, Josef | de |
dc.contributor.author | Ludwig, Manfred | de |
dc.contributor.author | Benz, Willi | de |
dc.contributor.author | Osorio, Ricardo | de |
dc.contributor.author | Berroth, Manfred | de |
dc.contributor.author | Hülsmann, Axel | de |
dc.contributor.author | Kaufel, Gudrun | de |
dc.contributor.author | Köhler, Klaus | de |
dc.contributor.author | Raynor, Brian | de |
dc.contributor.author | Schneider, Joachim | de |
dc.date.accessioned | 2014-05-12 | de |
dc.date.accessioned | 2016-03-31T11:45:30Z | - |
dc.date.available | 2014-05-12 | de |
dc.date.available | 2016-03-31T11:45:30Z | - |
dc.date.issued | 1991 | de |
dc.identifier.other | 406381046 | de |
dc.identifier.uri | http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92722 | de |
dc.identifier.uri | http://elib.uni-stuttgart.de/handle/11682/8227 | - |
dc.identifier.uri | http://dx.doi.org/10.18419/opus-8210 | - |
dc.description.abstract | A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is presented. The photoreceiver was fabricated using a 0.5-μm recessed-gate process for double delta-doped quantum-well HEMTs. The following mean values for the enhancement and depletion HEMT parameters, respectively, have been obtained: threshold voltages of 0.1 and -0.5 V, transconductances of 500 and 390 mS/mm, source resistances of 0.7 and 0.6 Ω-mm, and transit frequencies of 35 and 30 GHz. This process includes photodiodes. A deep wet etch was used to deposit the photodiodes on an undoped GaAs buffer layer. | en |
dc.language.iso | en | de |
dc.rights | info:eu-repo/semantics/openAccess | de |
dc.subject.classification | Photodiode , Galliumarsenid , Aluminiumarsenid , Mischkristall , HEMT | de |
dc.subject.ddc | 621.3 | de |
dc.title | 10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver | en |
dc.type | article | de |
ubs.fakultaet | Fakultätsübergreifend / Sonstige Einrichtung | de |
ubs.institut | Sonstige Einrichtung | de |
ubs.opusid | 9272 | de |
ubs.publikation.source | IEEE transactions on electron devices 38 (1991), S. 2713. URL http://dx.doi.org./ 10.1109/16.158744 | de |
ubs.publikation.typ | Zeitschriftenartikel | de |
Enthalten in den Sammlungen: | 15 Fakultätsübergreifend / Sonstige Einrichtung |
Dateien zu dieser Ressource:
Datei | Beschreibung | Größe | Format | |
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ber28.pdf | 138,08 kB | Adobe PDF | Öffnen/Anzeigen |
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