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  4. Influence of defects on the splitting of the acceptor ground state in silicon
 

Influence of defects on the splitting of the acceptor ground state in silicon

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las27.pdf (107.47 KB)

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1984

Authors

Ambrosy, Anton
Lassmann, Kurt
Goer, Anne M. de
Salce, Bernard
Zeile, Heinrich

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http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47024
http://elib.uni-stuttgart.de/handle/11682/7071
http://dx.doi.org/10.18419/opus-7054

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15 Fakultätsübergreifend / Sonstige Einrichtung

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