Ultrasonic attenuation due to resonant interaction with a distribution of level splittings of the ground state of shallow acceptors in Ge
| dc.contributor.author | Ortlieb, Erhard | de |
| dc.contributor.author | Schad, Hanspeter | de |
| dc.contributor.author | Lassmann, Kurt | de |
| dc.date.accessioned | 2009-10-07 | de |
| dc.date.accessioned | 2016-03-31T10:32:27Z | |
| dc.date.available | 2009-10-07 | de |
| dc.date.available | 2016-03-31T10:32:27Z | |
| dc.date.issued | 1976 | de |
| dc.description.abstract | The ultrasonic attenuation in Ge (Ga, In) has been measured in the frequency range from 500 MHz to 2.5 GHz, and from room temperature down to 1 K. Below 10 K the attenuation rises as ω2/T. For the first time saturation of the attenuation has been observed for ground state of a shallow acceptor. These results can be interpreted as due to resonance interaction with level splittings of a broad distribution with width of about 0.1 meV. | en |
| dc.identifier.other | 317909304 | de |
| dc.identifier.uri | http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-46801 | de |
| dc.identifier.uri | http://elib.uni-stuttgart.de/handle/11682/6733 | |
| dc.identifier.uri | http://dx.doi.org/10.18419/opus-6716 | |
| dc.language.iso | en | de |
| dc.rights | info:eu-repo/semantics/openAccess | de |
| dc.subject.classification | Dämpfung , Ultraschall , Akzeptor <Halbleiterphysik> | de |
| dc.subject.ddc | 530 | de |
| dc.title | Ultrasonic attenuation due to resonant interaction with a distribution of level splittings of the ground state of shallow acceptors in Ge | en |
| dc.type | article | de |
| ubs.fakultaet | Externe wissenschaftliche Einrichtungen | de |
| ubs.institut | Max-Planck-Institut für Festkörperforschung | de |
| ubs.opusid | 4680 | de |
| ubs.publikation.source | Solid State Communications 19 (1976), S. 599-601. URL http://dx.doi.org./10.1016/0038-1098(76)90076-4 | de |
| ubs.publikation.typ | Zeitschriftenartikel | de |