Ultraviolet photodetectors and readout based on a‐IGZO semiconductor technology
dc.contributor.author | Schellander, Yannick | |
dc.contributor.author | Winter, Marius | |
dc.contributor.author | Schamber, Maurice | |
dc.contributor.author | Munkes, Fabian | |
dc.contributor.author | Schalberger, Patrick | |
dc.contributor.author | Kuebler, Harald | |
dc.contributor.author | Pfau, Tilman | |
dc.contributor.author | Fruehauf, Norbert | |
dc.date.accessioned | 2023-10-18T09:18:05Z | |
dc.date.available | 2023-10-18T09:18:05Z | |
dc.date.issued | 2023 | de |
dc.date.updated | 2023-07-12T01:47:47Z | |
dc.description.abstract | In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP. | en |
dc.description.sponsorship | Deutsche Forschungsgemeinschaft | de |
dc.description.sponsorship | Projekt DEAL | de |
dc.identifier.issn | 1071-0922 | |
dc.identifier.issn | 1938-3657 | |
dc.identifier.other | 1869935454 | |
dc.identifier.uri | http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-136575 | de |
dc.identifier.uri | http://elib.uni-stuttgart.de/handle/11682/13657 | |
dc.identifier.uri | http://dx.doi.org/10.18419/opus-13638 | |
dc.language.iso | en | de |
dc.relation.uri | doi:10.1002/jsid.1202 | de |
dc.rights | info:eu-repo/semantics/openAccess | de |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/4.0/ | de |
dc.subject.ddc | 621.3 | de |
dc.title | Ultraviolet photodetectors and readout based on a‐IGZO semiconductor technology | en |
dc.type | article | de |
ubs.fakultaet | Informatik, Elektrotechnik und Informationstechnik | de |
ubs.fakultaet | Mathematik und Physik | de |
ubs.fakultaet | Fakultäts- und hochschulübergreifende Einrichtungen | de |
ubs.institut | Institut für Großflächige Mikroelektronik | de |
ubs.institut | 5. Physikalisches Institut | de |
ubs.institut | Stuttgart Research Centre of Photonic Engineering (SCoPE) | de |
ubs.publikation.seiten | 363-372 | de |
ubs.publikation.source | Journal of the Society for Information Display 31 (2023), S. 363-372 | de |
ubs.publikation.typ | Zeitschriftenartikel | de |