Browsing by Author "Schneider, Joachim"
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Item Open Access 10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver(1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is presented. The photoreceiver was fabricated using a 0.5-μm recessed-gate process for double delta-doped quantum-well HEMTs. The following mean values for the enhancement and depletion HEMT parameters, respectively, have been obtained: threshold voltages of 0.1 and -0.5 V, transconductances of 500 and 390 mS/mm, source resistances of 0.7 and 0.6 Ω-mm, and transit frequencies of 35 and 30 GHz. This process includes photodiodes. A deep wet etch was used to deposit the photodiodes on an undoped GaAs buffer layer.Item Open Access 10 Gbit/s monolithic integrated Msm-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver(1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Osorio, Ricardo; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim-Item Open Access 10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs(1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Axmann, Albert; Benz, Willi; Berroth, Manfred; Osorio, Ricardo; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMTs. A -3 dB bandwidth of 11.3 GHz has been achieved.Item Open Access 10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links(1992) Berroth, Manfred; Hurm, Volker; Lang, Manfred; Ludwig, Manfred; Nowotny, Ulrich; Wang, Zhigong; Wennekers, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3- μm gates. A 4 bit multiplexer and a laser diode driver for the transmitter as well as a transimpedance amplifier, bit synchronizer, and 4 bit demultiplexer for the receiver have been successfully operated with data rates up to 20 Gbit/s.Item Open Access 14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver(1993) Hurm, Volker; Ludwig, Manfred; Rosenzweig, Josef; Benz, Willi; Berroth, Manfred; Bosch, Roland; Bronner, Wolfgang; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifer has been fabricated using an enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs HEMT process. The band-width of 14.3 GHz implies suitability for transmission rates of up 20 Gbit/s. The transimpendance is 670 Ω (into 50 Ω) and the projected sensitivity is 16.4 dBm (BER = 10 -9).Item Open Access 15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors(1992) Wang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Gotzeina, Werner; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimAn integrated laser diode driver was realised using enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Ω loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.Item Open Access 16 x 16 bit parallel multiplier based on 6 K gate array with 0.3 μm AlGaAs/GaAs quantum well transistors(1992) Thiede, Andreas; Berroth, Manfred; Hurm, Volker; Nowotny, Ulrich; Seibel, Jörg; Gotzeina, W.; Sedler, Martin; Raynor, Brian; Köhler, Klaus; Hofmann, Peter; Hülsmann, Axel; Kaufel, Gudrun; Schneider, JoachimThe design and performance of a 16x16 bit parallel multiplier based on a 6 K gate array will be presented. This LSI semicustom IC demonstrates the high potential of the authors' AlGaAs/GaAs quantum well FETs with a gate length of 0.3 μm. The best multiplication time measured was 7.2 ns.Item Open Access 18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs(1992) Wang, Zhigong; Nowotny, Ulrich; Berroth, Manfred; Bronner, Wolfgang; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA monolithically integrated 2:1 multiplexer and laser diode driver was developed, using AlGaAs quantum well HEMTs of 0.3 μm gate length. The DC and modulation current is 25 and 45 mA, respectively. Open eye diagrams were measured at bit rates up to 18 Gbit/s with pseudorandom data streams.Item Open Access An 18-34-GHz dynamic frequency divider based on 0.2-μm AlGaAs/GaAs/AlGaAs quantum-well transistors(1993) Thiede, Andreas; Berroth, Manfred; Nowotny, Ulrich; Seibel, Jörg; Bosch, Roland; Köhler, Klaus; Raynor, Brian; Schneider, JoachimThe design and performance of a dynamic frequency divider was presented. This digital IC demonstrates the ability of the authors' AlGaAs/GaAs/AlGaAs quantum-well FETs with gate lengths of 0.2 μm. Stable operation was achieved in the frequency range from 18 GHz up to 34 GHz with a power consumption of 250 mW. To the authors' knowledge, this is the best result ever reported for HEMT circuits, and is similar to the frequency limit achieved by use of AlGaAs/GaAs HBTs.Item Open Access 19 GHz monolithic integrated clock recovery using PLL and 0.3 μm gate-length quantum-well HEMTs(1994) Wang, Zhigong; Berroth, Manfred; Seibel, Jörg; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, JoachimICs for optical data links have been developed for bit rates between 10 and 200 Gb/s. The only exception was the clock recovery (CR) IC at these high bit rates. In fact, the IC realization of CR is generally accepted as the weak point of high-speed system integration. While the bit rates of some ICs reach up to 40 Gb/s, monolithic ICs for a full CR function are limited to 2.5 Gb/s. The monolithic IC described here, for CR with a PLL including a full-balanced VCO, is based on the IC reported by Wang et. al. (1993). Clock frequencies up to 19 GHz are recovered with the IC reported here.Item Open Access A 2.5 ns 8 x 8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors(1991) Berroth, Manfred; Hurm, Volker; Nowotny, Ulrich; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimTo increase performance of GaAs LSI digital circuits, a 0.5 μm recessed gate process has been developed and utilized for an 8x8-b parallel multiplier. The chip contains about 3000 heterostructure field effect transistors and has a power consumption of 1.5 W. The best results of the maximum multiplication time measured were below 2.5 nsec.Item Open Access 20 Gb/s monolithic integrated clock recovery and data decision(1994) Wang, Zhigong; Berroth, Manfred; Hurm, Volker; Lang, Manfred; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, JoachimAn IC for 20 Gb/s clock recovery and data decision was realised using 0.3 m gate-length QW-HEMTs. A narrow-band regenerative frequency divider with on-chip resonator filters is used for the clock recovery. The parallel processing concept is accepted for the data decision. The complex IC was tested on wafer using 5 and 10-Gb/s input data. The desired 10-GHz clock signal and regenerated data signals have been obtained. The 2x2 mm 2 IC has a power consumption of about 0.5 W at -3 volt supply voltage.Item Open Access 20 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistors(1991) Nowotny, Ulrich; Lang, Manfred; Berroth, Manfred; Hurm, Volker; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3μm gate length. First results show a data rate of over 20 Gbit/s at 5 V supply voltage and 250 mW power consumption. The output voltage swing is adjustable between 0.3 V and 0.8 V for a 50 Ohm load. The out-put level can be varied between +1 V an -1 V. Comparison between simulation and measurement shows very good agreement.Item Open Access 7.5 Gb/s monolithically integrated clock recovery circuit using PLL and 0.3-μm gate length quantum well HEMT's(1994) Wang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA monolithically integrated clock recovery (CR) circuit making use of the phase-locked loop (PLL) circuit technique and enhancement/depletion AlGaAs/GaAs quantum well-high electron mobility transistors (QW-HEMT's) with gate lengths of 0.3 μm has been realized. A novel preprocessing circuit was used. In the PLL a fully-balanced varactorless VCO was applied. The VCO has a center oscillating frequency of about 7.7 GHz and a tuning range greater than 500 MHz. A satisfactory clock signal has been obtained at a bit rate of about 7.5 Gb/s. The power consumption is less than 200 mW at a supply voltage of -5 V.Item Open Access 7.5 Gb/s monolithically integrated clock recovery using PLL and 0.3 μM gate length quantum well HEMTs(1993) Wang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, JoachimA monolithically integrated clock recovery (CR) circuit making use of the phase-locked loop (PLL) circuit technique and enhancement/depletion AlGaAs/GaAs quantum well high electron mobility transistors (QW-HEMTs) with gate lengths of 0.3 μm has been realized. A novel preprocessing circuit was used. In the PLL a fully-balanced varactorless VCO has been introduced. The VCO has a centre oscillating frequency of about 7.5 GHz and a tuning range greater than 500 MHz. A satisfactory clock signal has been obtained at the bit rate of about 7.5 Gb/s. The power consumption is less than 200 mW at the supply voltage of -5 V.Item Open Access 8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs(1991) Hurm, Volker; Rosenzweig, Josef; Ludwig, Manfred; Benz, Willi; Berroth, Manfred; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, JoachimAn 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50 Omega output buffer has been fabricated using an enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMT process. Successful operation at data rates up to 10 Gbit/s has been demonstrated.Item Open Access Indirect optically controlled pseudomorphic HEMT based MMIC oscillator(1992) Bangert, Axel; Benz, Willi; Berroth, Manfred; Hülsmann, Axel; Hurm, Volker; Kaufel, Gudrun; Köhler, Klaus; Rosenzweig, Josef; Schneider, JoachimFor the first time an indirect optically controlled monolithic integrated oscillator was fabricated and examined experimentally. The oscillator was designed for a frequency of about 7 GHz. By illuminating a 60x60 μm2 photodiode by the light of a pigtailed laser diode (λ=840 nm), the free-running frequency of the oscillator was tunable in a range of more than 7 MHz. A locking range of more than 3 MHz was achieved. A phase shift in the output signal of nearly 180° has been observed.Item Open Access Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- μm gate length quantum-well HEMT's(1993) Wang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Ludwig, Manfred; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, JoachimAn integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs-GaAs quantum-well high electron mobility transistors (QW HEMTs) with gate lengths of 0.3 μm has been developed. Its large signal bandwidth is 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gb/s show an opening similar to that of the input signal. Supporting material is given indicating that the LDVD might operate at bit rates up to 20 Gb/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40-mA modulation current for a laser diode with 20-Ω dynamic resistance. The power consumption is less than 500 mW.