15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors

Abstract

An integrated laser diode driver was realised using enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Ω loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.