Browsing by Author "Werner, Jürgen H."

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Open Access
Fourier spotting : a novel setup for single-color reflectometry
(2022) Siegel, Johannes; Berner, Marcel; Werner, Jürgen H.; Proll, Günther; Fechner, Peter; Schubert, Markus
Single-color reflectrometry is a sensitive and robust detection method in optical biosensor applications, for example for bioanalysis. It is based on the interference of reflected monochromatic radiation and is label free. We present a novel setup for single-color reflectometry based on the patented technology of Berner et al. from 2016. Tilting areas of micro-mirrors allow us to encode the optical reflection signal of an analyte and reference channel into a particular carrier frequency with the amplitude being proportional to the local reflection. Therefore, a single photodiode is sufficient to collect the signals from both channels simultaneously. A 180∘ phase shift in the tilt frequency of two calibrated micro-mirror areas leads to a superposition of the analyte and reference signal which enables an efficient reduction of the baseline offset and potential baseline offset drift. A performance test reveals that we are able to detect changes of the refractive index n down to Δn < 0.01 of saline solutions as regents. A further test validates the detection of heterogeneous binding interaction. This test compromises immobilized testosterone-bovine serum albumin on a three-dimensional layer of biopolymer as ligand and monoclonal anti-testosterone antibodies as analyte. Antibody/antigen binding induces a local growth of the biolayer and change in the refractive index, which is measured via the local change of the reflection. Reproducible measurements enable for the analysis of the binding kinetics by determining the affinity constant KA = 1.59 × 10- 7 M- 1. In summary, this work shows that the concept of differential Fourier spotting as novel setup for single-color reflectometry is suitable for reliable bioanalysis.Graphical Abstract
Open Access
Laser activation for highly boron-doped passivated contacts
(2023) Sharbaf Kalaghichi, Saman; Hoß, Jan; Zapf-Gottwick, Renate; Werner, Jürgen H.
Passivated, selective contacts in silicon solar cells consist of a double layer of highly doped polycrystalline silicon (poly Si) and thin interfacial silicon dioxide (SiO2). This design concept allows for the highest efficiencies. Here, we report on a selective laser activation process, resulting in highly doped p++-type poly Si on top of the SiO2. In this double-layer structure, the p++-poly Si layer serves as a layer for transporting the generated holes from the bulk to a metal contact and, therefore, needs to be highly conductive for holes. High boron-doping of the poly Si layers is one approach to establish the desired high conductivity. In a laser activation step, a laser pulse melts the poly Si layer, and subsequent rapid cooling of the Si melt enables electrically active boron concentrations exceeding the solid solubility limit. In addition to the high conductivity, the high active boron concentration in the poly Si layer allows maskless patterning of p++-poly Si/SiO2 layers by providing an etch stop layer in the Si etchant solution, which results in a locally structured p++-poly Si/SiO2 after the etching process. The challenge in the laser activation technique is not to destroy the thin SiO2, which necessitates fine tuning of the laser process. In order to find the optimal processing window, we test laser pulse energy densities (Hp) in a broad range of 0.7 J/cm2 ≤ Hp ≤ 5 J/cm2 on poly Si layers with two different thicknesses dpoly Si,1 = 155 nm and dpoly Si,2 = 264 nm. Finally, the processing window 2.8 J/cm2≤ Hp ≤ 4 J/cm2 leads to the highest sheet conductance (Gsh) without destroying the SiO2 for both poly Si layer thicknesses. For both tested poly Si layers, the majority of the symmetric lifetime samples processed using these Hp achieve a good passivation quality with a high implied open circuit voltage (iVOC) and a low saturation current density (J0). The best sample achieves iVOC = 722 mV and J0 = 6.7 fA/cm2 per side. This low surface recombination current density, together with the accompanying measurements of the doping profiles, suggests that the SiO2 is not damaged during the laser process. We also observe that the passivation quality is independent of the tested poly Si layer thicknesses. The findings of this study show that laser-activated p++-poly Si/SiO2 are not only suitable for integration into advanced passivated contact solar cells, but also offer the possibility of maskless patterning of these stacks, substantially simplifying such solar cell production.
Open Access
Pulsed laser porosification of silicon thin films
(2016) Sämann, Christian; Köhler, Jürgen R.; Dahlinger, Morris; Schubert, Markus B.; Werner, Jürgen H.
Open Access
Size- and surface-dependent solubility of cadmium telluride in aqueous solutions
(2021) Zapf-Gottwick, Renate; Zorn, Matthias; Nover, Jessica; Koch, Michael; Feifel, Carolin; Werner, Jürgen H.
Due to the toxicity of cadmium (Cd) and the scarcity of telluride (Te), CdTe-based photovoltaic modules have been under discussion during the last few years. In particular, the stability of CdTe in aqueous solutions is under debate. Here we show that the stability of CdTe depends not only on the pH of water-based solutions but also on size and surface treatment of CdTe particles. We compare milled module pieces with CdTe powders of different particle size. The leaching of CdTe is conditioned by the outdiffusion of Cd and Te at the interface between CdTe particles and the aqueous solution. The smaller the particle size, the faster the leaching. Therefore, milled module pieces decompose faster than CdTe powders with relatively large grains. We observe a dependence on time t according to t0.43. The room temperature diffusion coefficients are calculated as DCd ≈ 3 × 10-17 cm2/s for Cd, and DTe ≈ 1.5 × 10−17 cm2/s for Te in pH4. The chemical instability in aqueous solutions follows thermodynamic considerations. The solution behavior of Cd and Te depends on the pH value and the redox potential of the aqueous solutions. Chemical treatments such as those used in solar cell production modify the surface of the CdTe particles and their leaching behavior.
Open Access
Three-step process for efficient solar cells with boron-doped passivated contacts
(2024) Sharbaf Kalaghichi, Saman; Hoß, Jan; Linke, Jonathan; Lange, Stefan; Werner, Jürgen H.
Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time 𝑡anneal = 30 min and an annealing temperature 600 °C ≤ 𝑇anneal ≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature 𝑇anneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.
Open Access
Unified model for laser doping of silicon from precursors
(2021) Hassan, Mohamed; Dahlinger, Morris; Köhler, Jürgen R.; Zapf-Gottwick, Renate; Werner, Jürgen H.
Laser doping of silicon with the help of precursors is well established in photovoltaics. Upon illumination with the constant or pulsed laser beam, the silicon melts and doping atoms from the doping precursor diffuse into the melted silicon. With the proper laser parameters, after resolidification, the silicon is doped without any lattice defects. Depending on laser energy and on the kind of precursor, the precursor either melts or evaporates during the laser process. For high enough laser energies, even parts of the silicon’s surface evaporate. Here, we present a unified model and simulation program, which considers all these cases. We exemplify our model with experiments and simulations of laser doping from a boron oxide precursor layer. In contrast to previous models, we are able to predict not only the width and depth of the patterns on the deformed silicon surface but also the doping profiles over a wide range of laser energies. In addition, we also show that the diffusion of the boron atoms in the molten Si is boosted by a thermally induced convection in the silicon melt: the Gaussian intensity distribution of the laser beam increases the temperature-gradient-induced surface tension gradient, causing the molten Si to circulate by Marangoni convection. Laser pulse energy densities above H > 2.8 J/cm2 lead not only to evaporation of the precursor, but also to a partial evaporation of the molten silicon. Without considering the evaporation of Si, it is not possible to correctly predict the doping profiles for high laser energies. About 50% of the evaporated materials recondense and resolidify on the wafer surface. The recondensed material from each laser pulse forms a dopant source for the subsequent laser pulses.