05 Fakultät Informatik, Elektrotechnik und Informationstechnik
Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/6
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Item Open Access Benchmarking the performance of portfolio optimization with QAOA(2022) Brandhofer, Sebastian; Braun, Daniel; Dehn, Vanessa; Hellstern, Gerhard; Hüls, Matthias; Ji, Yanjun; Polian, Ilia; Bhatia, Amandeep Singh; Wellens, ThomasWe present a detailed study of portfolio optimization using different versions of the quantum approximate optimization algorithm (QAOA). For a given list of assets, the portfolio optimization problem is formulated as quadratic binary optimization constrained on the number of assets contained in the portfolio. QAOA has been suggested as a possible candidate for solving this problem (and similar combinatorial optimization problems) more efficiently than classical computers in the case of a sufficiently large number of assets. However, the practical implementation of this algorithm requires a careful consideration of several technical issues, not all of which are discussed in the present literature. The present article intends to fill this gap and thereby provides the reader with a useful guide for applying QAOA to the portfolio optimization problem (and similar problems). In particular, we will discuss several possible choices of the variational form and of different classical algorithms for finding the corresponding optimized parameters. Viewing at the application of QAOA on error-prone NISQ hardware, we also analyse the influence of statistical sampling errors (due to a finite number of shots) and gate and readout errors (due to imperfect quantum hardware). Finally, we define a criterion for distinguishing between ‘easy’ and ‘hard’ instances of the portfolio optimization problem.Item Open Access Review on resistive switching devices based on multiferroic BiFeO3(2023) Zhao, Xianyue; Menzel, Stephan; Polian, Ilia; Schmidt, Heidemarie; Du, NanThis review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.e., ferroelectricity and valence change memory, are thoroughly reviewed, and the impact of various effects such as the doping effect, especially in the BFO layer, is evaluated. Finally, this review provides the applications of BFO devices and discusses the valid criteria for evaluating the energy consumption in RS and potential optimization techniques for memristive devices.Item Open Access Memristive true random number generator for security applications(2024) Zhao, Xianyue; Chen, Li-Wei; Li, Kefeng; Schmidt, Heidemarie; Polian, Ilia; Du, NanThis study explores memristor-based true random number generators (TRNGs) through their evolution and optimization, stemming from the concept of memristors first introduced by Leon Chua in 1971 and realized in 2008. We will consider memristor TRNGs coming from various entropy sources for producing high-quality random numbers. However, we must take into account both their strengths and weaknesses. The comparison with CMOS-based TRNGs will serve as an illustration that memristor TRNGs stand out due to their simpler circuits and lower power consumption- thus leading us into a case study involving electroless YMnO3 (YMO) memristors as TRNG entropy sources that demonstrate good security properties by being able to produce unpredictable random numbers effectively. The end of our analysis sees us pinpointing challenges: post-processing algorithm optimization coupled with ensuring reliability over time for memristor-based TRNGs aimed at next-generation security applications.Item Open Access Cryogenic embedded system to support quantum computing : from 5-nm FinFET to full processor(2023) Genssler, Paul R.; Klemme, Florian; Parihar, Shivendra Singh; Brandhofer, Sebastian; Pahwa, Girish; Polian, Ilia; Chauhan, Yogesh Singh; Amrouch, HussamItem Open Access Error control scheme for malicious and natural faults in cryptographic modules(2020) Gay, Mael; Karp, Batya; Keren, Osnat; Polian, IliaToday’s electronic systems must simultaneously fulfill strict requirements on security and reliability. In particular, their cryptographic modules are exposed to faults, which can be due to natural failures (e.g., radiation or electromagnetic noise) or malicious fault-injection attacks. We present an architecture based on a new class of error-detecting codes that combine robustness properties with a minimal distance. The new architecture guarantees (with some probability) the detection of faults injected by an intelligent and strategic adversary who can precisely control the disturbance. At the same time it supports automatic correction of low-multiplicity faults. To this end, we discuss an efficient technique to correct single nibble/byte errors while avoiding full syndrome analysis. We also examine a Compact Protection Code (CPC)-based system level fault manager that considers this code an inner code (and the CPC as its outer code). We report experimental results obtained by physical fault injection on the SAKURA-G FPGA board. The experimental results reconfirm the assumption that faults may cause an arbitrary number of bit flips. They indicate that a combined inner-outer coding scheme can significantly reduce the number of fault events that go undetected due to erroneous corrections of the inner code.Item Open Access Physics inspired compact modelling of BiFeO3 based memristors(2022) Yarragolla, Sahitya; Du, Nan; Hemke, Torben; Zhao, Xianyue; Chen, Ziang; Polian, Ilia; Mussenbrock, ThomasWith the advent of the Internet of Things, nanoelectronic devices or memristors have been the subject of significant interest for use as new hardware security primitives. Among the several available memristors, BiFe O3 (BFO)-based electroforming-free memristors have attracted considerable attention due to their excellent properties, such as long retention time, self-rectification, intrinsic stochasticity, and fast switching. They have been actively investigated for use in physical unclonable function (PUF) key storage modules, artificial synapses in neural networks, nonvolatile resistive switches, and reconfigurable logic applications. In this work, we present a physics-inspired 1D compact model of a BFO memristor to understand its implementation for such applications (mainly PUFs) and perform circuit simulations. The resistive switching based on electric field-driven vacancy migration and intrinsic stochastic behaviour of the BFO memristor are modelled using the cloud-in-a-cell scheme. The experimental current–voltage characteristics of the BFO memristor are successfully reproduced. The response of the BFO memristor to changes in electrical properties, environmental properties (such as temperature) and stress are analyzed and consistant with experimental results.