05 Fakultät Informatik, Elektrotechnik und Informationstechnik
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Item Open Access Fabrication and electrical characterization of ultra-thin substrate IGBT(2013) Guhathakurta, JajnabalkyaCurrent topics such as electro-mobility and renewable energy demand the development of power devices with high voltage and current ratings along with minimum switching losses. Amongst the power devices in today’s market, IGBTs have gained a lot of significance in this field over its competitors like Power MOSFETS and Thyristors. Today’s industry has recently taken a huge step in this direction to implement the use of thin-wafer technology for fabrication of IGBTs to reduce the on-resistance. However, this comes with a complexity of handling these thin wafers which demands the need of high end robotics. For research work, accesses to such resources are not feasible and if we are not able to fabricate device which the industry is fabricating today, we cannot add improvements to it and hence the research in this domain becomes restricted. The primary objective of this thesis work is to develop a technology for fabrication of Ultra-Thin substrate IGBT which can be achieved at any standard semiconductor research facility and in the course, reducing the on-resistance of the device wherever possible. The most promising solution was the use of Ultra-Thin Si-membranes as a substrate for fabrication. These Si-membranes were fabricated by anisotropic etching of Si wafers by TMAH. IGBT being a four-layered device, the required layers were deposited on the Si-membrane by MBE to achieve very thin and distinct layers which would minimize the on-resistance. Uniquely the Gate terminal of the device was structured on the sidewall of the mesa structure as opposed to conventional trench gate structures. The device with such dimension and structure was initially simulated by the device simulator ATLAS from Silvaco to verify the working of the device and to have a general idea of what kind of a characteristics to expect from the fabricated device. Thereafter the devices were successfully fabricated at our research facility at IHT. Even though there were numerous technical challenges and difficulties, the technology proved to be robust and we were able to fabricate the first IGBT at IHT even in the first run. The electrical characteristics showed a good forward characteristics of the device with good gate response and high on-current to off-current ratio but the reverse characteristics of the device showed unusual characteristics which is also investigated in this thesis work.