05 Fakultät Informatik, Elektrotechnik und Informationstechnik

Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/6

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Institute: search.filters.UBSInstitut.Stuttgart Research Centre of Photonic Engineering (SCoPE)Subject: search.filters.subject.333.7

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    How much photovoltaic efficiency is enough?
    (2022) Werner, Jürgen Heinz
    At present, the purchasing prices for silicon-based photovoltaic modules with 20% efficiency and more are between 20 and 40 EURct/Wp. These numbers correspond to 40 to 80 EUR/m2 and are in the same range as the mounting costs (material prices plus salaries) of such modules. Installers and operators of photovoltaic systems carefully balance the module and mounting costs when deciding among modules of different efficiencies. This contribution emulates the installer’s decision via a simple, analytical module mounting decision (Mo2De) model. A priori, the model, and the resulting conclusions are completely independent of the photovoltaically active material inside the modules. De facto, however, based on the present state (cost, efficiency, reliability, bankability, etc.) of modules fabricated from (single) crystalline Si cells, conclusions on other photovoltaic materials might also be drawn: On the one hand, the model suggests that lower-efficiency modules with efficiencies below 20% will be driven out of the market. Keeping in mind their installation costs, installers will ask for large discounts for lower-efficiency modules. Technologies based on organic semiconductors, CdTe, CIGS, and even multicrystalline Si, might not survive in the utility market, or in industrial and residential applications. Moreover, this 20% mark will soon reach 23%, and finally will stop at around 25% for the very best, large-area (square meter sized) commercial modules based on single crystalline silicon only. On the other hand, it also seems difficult for future higher-efficiency modules based on tandem/triple cells to compete with standard Si-based reference modules. Compared to their expected higher efficiency, the production costs of tandem/triple cell modules and, therefore, also their required markup in sales, might be too high. Depending on the mounting cost, the Mo2De-model predicts acceptable markup values of 1 EURct/Wp (for low mounting costs of around 10 EUR/m2) to 11 EURct/Wp (for high mounting costs of 100 EUR/m2) if the module efficiency increases from 23% to 30%. Therefore, a 23% to 24% module efficiency, which is possible with silicon cells alone, might be enough for many terrestrial photovoltaic applications.
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    Mitigating the amorphization of perovskite layers by using atomic layer deposition of alumina
    (2025) Kedia, Mayank; Das, Chittaranjan; Kot, Malgorzata; Yalcinkaya, Yenal; Zuo, Weiwei; Tabah Tanko, Kenedy; Matvija, Peter; Ezquer, Mikel; Cornago, Iñaki; Hempel, Wolfram; Kauffmann, Florian; Plate, Paul; Lira-Cantu, Monica; Weber, Stefan A. L.; Saliba, Michael
    Atomic layer deposition of aluminum oxide (ALD-Al2O3) layers has recently been studied for stabilizing perovskite solar cells (PSCs) against environmental stressors, such as humidity and oxygen. In addition, the ALD-Al2O3 layer acts as a protective barrier, mitigating pernicious halide ion migration from the perovskite towards the hole transport interface. However, its effectiveness in preventing the infiltration of ions and additives from the hole-transport layer into perovskites remains insufficiently understood. Herein, we demonstrate the deposition of a compact ultrathin (∼0.75 nm) ALD-Al2O3 layer that conformally coats the morphology of a triple-cation perovskite layer. This promotes an effective contact of the hole transporter layer on top of the perovskite, thereby improving the charge carrier collection between these two layers. Upon systematically investigating the layer-by-layer structure of the PSC, we discovered that ALD-Al2O3 also acts as a diffusion barrier for the degraded species from the adjacent transport layer into the perovskite. In addition to these protective considerations, ALD-Al2O3 impedes the transition of crystalline perovskites to an undesired amorphous phase. Consequently, the dual functionality (i.e., enhanced contact and diffusion barrier) of the ALD-Al2O3 protection enhanced the device performance from 19.1% to 20.5%, while retaining 98% of its initial performance compared to <10% for pristine devices after 1500 h of outdoor testing under ambient conditions. Finally, this study deepens our understanding of the mechanism of ALD-Al2O3 as a two-way diffusion barrier, highlighting the multifaceted role of buffer layers in interfacial engineering for the long-term stability of PSCs.