05 Fakultät Informatik, Elektrotechnik und Informationstechnik

Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/6

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Institute: search.filters.UBSInstitut.Stuttgart Research Centre of Photonic Engineering (SCoPE)Subject: search.filters.subject.621.3

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    Ultraviolet photodetectors and readout based on a‐IGZO semiconductor technology
    (2023) Schellander, Yannick; Winter, Marius; Schamber, Maurice; Munkes, Fabian; Schalberger, Patrick; Kuebler, Harald; Pfau, Tilman; Fruehauf, Norbert
    In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP.
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    Image preprocessing for outdoor luminescence inspection of large photovoltaic parks
    (2021) Kölblin, Pascal; Bartler, Alexander; Füller, Marvin
    Electroluminescence (EL) measurements allow one to detect damages and/or defective parts in photovoltaic systems. In principle, it seems possible to predict the complete current/voltage curve from such pictures even automatically. However, such a precise analysis requires image corrections and calibrations, because vignetting and lens distortion cause signal and spatial distortions. Earlier works on crystalline silicon modules used the cell gap joints (CGJ) as calibration pattern. Unfortunately, this procedure fails if the detection of the gaps is not accurate or if the contrast in the images is low. Here, we enhance the automated camera calibration algorithm with a reliable pattern detection and analyze quantitatively the quality of the process. Our method uses an iterative Hough transform to detect line structures and uses three key figures (KF) to separate detected busbars from cell gaps. This method allows a reliable identification of all cell gaps, even in noisy images or if disconnected edges in PV cells exist or potential induced degradation leads to a low contrast between active cell area and background. In our dataset, a subset of 30 EL images (72 cell each) forming grid (5×11) lead to consistent calibration results. We apply the calibration process to 997 single module EL images of PV modules and evaluate our results with a random subset of 40 images. After lens distortion correction and perspective correction, we analyze the residual deviation between ideal target grid points and the previously detected CGJ after applied distortion and perspective correction. For all of the 2200 control points in the 40 evaluation images, we achieve a deviation of less than or equal to 3 pixels. For 50% of the control points, a deviation of of less than or equal to 1 pixel is reached.
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    Mitigating the amorphization of perovskite layers by using atomic layer deposition of alumina
    (2025) Kedia, Mayank; Das, Chittaranjan; Kot, Malgorzata; Yalcinkaya, Yenal; Zuo, Weiwei; Tabah Tanko, Kenedy; Matvija, Peter; Ezquer, Mikel; Cornago, Iñaki; Hempel, Wolfram; Kauffmann, Florian; Plate, Paul; Lira-Cantu, Monica; Weber, Stefan A. L.; Saliba, Michael
    Atomic layer deposition of aluminum oxide (ALD-Al2O3) layers has recently been studied for stabilizing perovskite solar cells (PSCs) against environmental stressors, such as humidity and oxygen. In addition, the ALD-Al2O3 layer acts as a protective barrier, mitigating pernicious halide ion migration from the perovskite towards the hole transport interface. However, its effectiveness in preventing the infiltration of ions and additives from the hole-transport layer into perovskites remains insufficiently understood. Herein, we demonstrate the deposition of a compact ultrathin (∼0.75 nm) ALD-Al2O3 layer that conformally coats the morphology of a triple-cation perovskite layer. This promotes an effective contact of the hole transporter layer on top of the perovskite, thereby improving the charge carrier collection between these two layers. Upon systematically investigating the layer-by-layer structure of the PSC, we discovered that ALD-Al2O3 also acts as a diffusion barrier for the degraded species from the adjacent transport layer into the perovskite. In addition to these protective considerations, ALD-Al2O3 impedes the transition of crystalline perovskites to an undesired amorphous phase. Consequently, the dual functionality (i.e., enhanced contact and diffusion barrier) of the ALD-Al2O3 protection enhanced the device performance from 19.1% to 20.5%, while retaining 98% of its initial performance compared to <10% for pristine devices after 1500 h of outdoor testing under ambient conditions. Finally, this study deepens our understanding of the mechanism of ALD-Al2O3 as a two-way diffusion barrier, highlighting the multifaceted role of buffer layers in interfacial engineering for the long-term stability of PSCs.