Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-10745
Authors: Nitzsche, Maximilian
Zehelein, Matthias
Tröster, Nathan
Roth-Stielow, Jörg
Title: Precise voltage measurement for power electronics with high switching frequencies
Issue Date: 2018
metadata.ubs.publikation.typ: Konferenzbeitrag
metadata.ubs.konferenzname: PCIM Europe, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (2018, Nürnberg)
metadata.ubs.publikation.source: PCIM Europe 2018, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management : proceedings. Berlin : VDE Verlag, 2018. ISBN 978-3-8007-4646-0, S. 1356-1361
URI: http://elib.uni-stuttgart.de/handle/11682/10762
http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-107625
http://dx.doi.org/10.18419/opus-10745
ISBN: 978-3-8007-4646-0
metadata.ubs.bemerkung.extern: Website der PCIM Europe: www.pcim-europe.com
Abstract: In this paper different approaches in precise measurement of gate voltages as well as drain-source voltages of modern SiC and GaN transistors are compared. An approach to calculate the necessary bandwidth of a voltage probe to reproduce the voltage slope is presented. Furthermore, state-of-the-art voltage probes are compared in means of bandwidth, common mode reduction and response on EMI.
Appears in Collections:05 Fakultät Informatik, Elektrotechnik und Informationstechnik

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