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Authors: Geiger, Michael
Hagel, Marion
Reindl, Thomas
Weis, Jürgen
Weitz, R. Thomas
Solodenko, Helena
Schmitz, Guido
Zschieschang, Ute
Klauk, Hagen
Acharya, Rachana
Title: Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
Issue Date: 2021 Zeitschriftenartikel 13 Scientific reports 11 (2021), No. 6382
ISSN: 2045-2322
Abstract: A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current–voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.
Appears in Collections:03 Fakultät Chemie

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