Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-4894
|Title:||One-phonon ionization of neutral donors in germanium|
|metadata.ubs.publikation.source:||Monemar, Bo (Hrsg.): Shallow impurities in semiconductors 1988 : proceedings of the Third International Conference held in Linköping, Sweden, 10 - 12 August 1988. Bristol : Institute of Physics, 1989 (Conference series / Institute of Physics, 95), S. 173-178|
|Abstract:||Here we show by phonon spectroscopy with superconducting tunnelling junctions that one-phonon excitations from the ground state to the conduction band (CB) are measurable as phonon induced conductivity (PIC) changes in the special case of donors in Ge. For the conductivity thresholds we find somewhat smaller binding energies than evaluated from optical measurements whereas for the 1s-singlet to 1s-triplet ground state splitting as seen by elastic phonon scattering we obtain the optical values.|
|Appears in Collections:||08 Fakultät Mathematik und Physik|
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