Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-4901
Authors: Burger, Wilfried
Lassmann, Kurt
Title: Continuous high resolution phonon spectroscopy up to 12meV : measurement of the A+ binding energies in silicon
Issue Date: 1986
metadata.ubs.publikation.typ: Zeitschriftenartikel
metadata.ubs.publikation.source: Physical Review B 33 (1986), S. 5868-5870. URL http://dx.doi.org./10.1103/PhysRevB.33.5868
URI: http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47062
http://elib.uni-stuttgart.de/handle/11682/4918
http://dx.doi.org/10.18419/opus-4901
Abstract: We have measured the binding energies of Ga+, Al+, and In+ centers in silicon with energy-resolved phonon-induced electrical conductivity. For Ga+ and Al+ we obtain the value of about 2 meV as earlier found for B+, whereas the binding energy of In+ is 6 meV. Spectral structures attributed to impurity interactions found for higher concentrations of In at energies up to about 12 meV demonstrate that acoustic phonons up to this energy are transmitted from the tunnel junction to the substrate.
Appears in Collections:08 Fakultät Mathematik und Physik

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