Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-4902
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dc.contributor.authorGroß, Peterde
dc.contributor.authorGienger, Martinde
dc.contributor.authorLassmann, Kurtde
dc.date.accessioned2009-10-12de
dc.date.accessioned2016-03-31T08:35:52Z-
dc.date.available2009-10-12de
dc.date.available2016-03-31T08:35:52Z-
dc.date.issued1987de
dc.identifier.other317995545de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47159de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/4919-
dc.identifier.urihttp://dx.doi.org/10.18419/opus-4902-
dc.description.abstractBy the new technique of phonon induced conductance we have investigated the dependence on pressure of the phonoionization response of shallow A+-states in Si with superconducting Al-junctions as monochromatic phonon generators. In the case of B+ and Al+ we obtain a much more complicated behaviour than previously found for B+ with FIR-photoconductivity which may be connected with differences in coupling for short wavelength phonons. In the case of in+ on the other hand a shift to lower energies is observed for uniaxial pressure in [100]-direction whereas for pressure in [111]-direction only the signal intensity varies but not the position of the threshold.en
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationPhononeninduzierte elektrische Leitfähigkeit , Phononenspektroskopiede
dc.subject.ddc530de
dc.titleDependence of the phonoionization of A+-states in Si on uniaxial pressureen
dc.typearticlede
dc.date.updated2014-10-16de
ubs.fakultaetFakultät Mathematik und Physikde
ubs.institut1. Physikalisches Institutde
ubs.opusid4715de
ubs.publikation.sourceJapanese journal of applied physics 26 (1987), Suppl. 3, S. 673-674. URL http://dx.doi.org/10.7567/JJAPS.26S3.673de
ubs.publikation.typZeitschriftenartikelde
Appears in Collections:08 Fakultät Mathematik und Physik

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