Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-6716
Authors: Ortlieb, Erhard
Schad, Hanspeter
Lassmann, Kurt
Title: Ultrasonic attenuation due to resonant interaction with a distribution of level splittings of the ground state of shallow acceptors in Ge
Issue Date: 1976
metadata.ubs.publikation.typ: Zeitschriftenartikel
metadata.ubs.publikation.source: Solid State Communications 19 (1976), S. 599-601. URL http://dx.doi.org./10.1016/0038-1098(76)90076-4
URI: http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-46801
http://elib.uni-stuttgart.de/handle/11682/6733
http://dx.doi.org/10.18419/opus-6716
Abstract: The ultrasonic attenuation in Ge (Ga, In) has been measured in the frequency range from 500 MHz to 2.5 GHz, and from room temperature down to 1 K. Below 10 K the attenuation rises as ω2/T. For the first time saturation of the attenuation has been observed for ground state of a shallow acceptor. These results can be interpreted as due to resonance interaction with level splittings of a broad distribution with width of about 0.1 meV.
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