Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-6716
|Title:||Ultrasonic attenuation due to resonant interaction with a distribution of level splittings of the ground state of shallow acceptors in Ge|
|metadata.ubs.publikation.source:||Solid State Communications 19 (1976), S. 599-601. URL http://dx.doi.org./10.1016/0038-1098(76)90076-4|
|Abstract:||The ultrasonic attenuation in Ge (Ga, In) has been measured in the frequency range from 500 MHz to 2.5 GHz, and from room temperature down to 1 K. Below 10 K the attenuation rises as ω2/T. For the first time saturation of the attenuation has been observed for ground state of a shallow acceptor. These results can be interpreted as due to resonance interaction with level splittings of a broad distribution with width of about 0.1 meV.|
|Appears in Collections:||14 Externe wissenschaftliche Einrichtungen|
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