10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs
Files
Date
1991
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
A 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMTs. A -3 dB bandwidth of 11.3 GHz has been achieved.