Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-8190
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dc.contributor.authorHurm, Volkerde
dc.contributor.authorRosenzweig, Josefde
dc.contributor.authorLudwig, Manfredde
dc.contributor.authorAxmann, Albertde
dc.contributor.authorBenz, Willide
dc.contributor.authorBerroth, Manfredde
dc.contributor.authorOsorio, Ricardode
dc.contributor.authorHülsmann, Axelde
dc.contributor.authorKaufel, Gudrunde
dc.contributor.authorKöhler, Klausde
dc.contributor.authorRaynor, Briande
dc.contributor.authorSchneider, Joachimde
dc.date.accessioned2014-04-30de
dc.date.accessioned2016-03-31T11:45:28Z-
dc.date.available2014-04-30de
dc.date.available2016-03-31T11:45:28Z-
dc.date.issued1991de
dc.identifier.other406375747de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92401de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/8207-
dc.identifier.urihttp://dx.doi.org/10.18419/opus-8190-
dc.description.abstractA 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMTs. A -3 dB bandwidth of 11.3 GHz has been achieved.en
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationOptoelektronische Schaltung , Photodiode , HEMT , Galliumarsenid-Feldeffekttransistorde
dc.subject.ddc621.3de
dc.title10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTsen
dc.typearticlede
dc.date.updated2015-11-11de
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.institutSonstige Einrichtungde
ubs.opusid9240de
ubs.publikation.sourceMicroelectronic engineering 15 (1991), S. 275-278. URL http://dx.doi.org/10.1016/0167-9317(91)90228-6de
ubs.publikation.typZeitschriftenartikelde
Appears in Collections:15 Fakultätsübergreifend / Sonstige Einrichtung

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