Please use this identifier to cite or link to this item: http://dx.doi.org/10.18419/opus-8205
Authors: Berroth, Manfred
Bosch, Roland
Hurm, Volker
Title: Frequency dependent CV measurements of GaAs/AlGaAs heterostructures
Issue Date: 1989
metadata.ubs.publikation.typ: Konferenzbeitrag
metadata.ubs.publikation.source: Heuberger, Anton (Hrsg.): ESSDERC '89 : 19th European Solid State Device Research Conference, Berlin. Berlin : Springer, 1989. - ISBN 3-540-51000-1, S. 619-622
URI: http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92609
http://elib.uni-stuttgart.de/handle/11682/8222
http://dx.doi.org/10.18419/opus-8205
Abstract: A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel.
Appears in Collections:15 Fakultätsübergreifend / Sonstige Einrichtung

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