Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands

Abstract

In a series of four papers magnetooptical transitions are presented for InSb crystals, which are subjected to uniaxial stress perpendicular to the magnetic field. Here, in the first paper, we establish an 8×8 k⋅p Hamiltonian matrix for stress Tǁ[100] and field Bǁ[001] and diagonalize it exactly. The dependence of valence and conduction states on stress and longitudinal momentum is discussed and compared with the geometry of parallel fields TǁBǁ[001]. Characteristic features are extracted for inter- and intraband transitions. Under crossed fields, the levels are separated much stronger with stress, yielding more insight than in the parallel configuration.