Temperature and pressure dependence of the resistivity of &#946;-(BEDT-TTF)2X (X=I3, I2Au) and &#945;t-(BEDT-TTF)2I3

Weger, Meir; Bender, Klaus; Klutz, Thomas; Schweitzer, Dieter; Gross, Frieder; Heidmann, Claus Peter; Probst, Christian; Andres, Klaus

Temperature and pressure dependence of the resistivity of β-(BEDT-TTF)2X (X=I3, I2Au) and αt-(BEDT-TTF)2I3

dc.contributor.author	Weger, Meir	de
dc.contributor.author	Bender, Klaus	de
dc.contributor.author	Klutz, Thomas	de
dc.contributor.author	Schweitzer, Dieter	de
dc.contributor.author	Gross, Frieder	de
dc.contributor.author	Heidmann, Claus Peter	de
dc.contributor.author	Probst, Christian	de
dc.contributor.author	Andres, Klaus	de
dc.date.accessioned	2011-08-02	de
dc.date.accessioned	2016-03-31T11:43:46Z
dc.date.available	2011-08-02	de
dc.date.available	2016-03-31T11:43:46Z
dc.date.issued	1988	de
dc.description.abstract	The temperature dependence of the resistivity of the organic metals and superconductors {β-(BEDT-TTF)2I3, β-{3-(BEDT-TTF)2I2Au and αt(BEDT-TTF)2I3 was measured at ambient and at several isotropic pressures (up to 2.5 kbar). By the application of a relatively low pressure, it is possible to measure the term in the resistivity that is linear in temperature. This term is masked by the larger T2 term at ambient pressure. It is shown that in the temperature range below 120 K, the external modes are mainly responsible for the resistivity, while above this temperature the flipping of the CH2 groups becomes important. The linear electron-phonon coupling corresponds to a value of λ between 1 and 1.5.	en
dc.identifier.other	353304964	de
dc.identifier.uri	http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-65032	de
dc.identifier.uri	http://elib.uni-stuttgart.de/handle/11682/7660
dc.identifier.uri	http://dx.doi.org/10.18419/opus-7643
dc.language.iso	en	de
dc.rights	info:eu-repo/semantics/openAccess	de
dc.subject.classification	Tetrathiafulvalen , Organischer Supraleiter , Elektrische Leitfähigkeit	de
dc.subject.ddc	530	de
dc.title	Temperature and pressure dependence of the resistivity of β-(BEDT-TTF)2X (X=I3, I2Au) and αt-(BEDT-TTF)2I3	en
dc.type	article	de
ubs.fakultaet	Fakultätsübergreifend / Sonstige Einrichtung	de
ubs.institut	Sonstige Einrichtung	de
ubs.opusid	6503	de
ubs.publikation.source	Synthetic metals 25 (1988), S. 49-58	de
ubs.publikation.typ	Zeitschriftenartikel	de