A study of the ground state of acceptors in silicon from thermal transport experiments

Goer, Anne M. de; Locatelli, Marcel; Lassmann, Kurt

A study of the ground state of acceptors in silicon from thermal transport experiments

dc.contributor.author	Goer, Anne M. de	de
dc.contributor.author	Locatelli, Marcel	de
dc.contributor.author	Lassmann, Kurt	de
dc.date.accessioned	2009-10-07	de
dc.date.accessioned	2016-03-31T08:35:51Z
dc.date.available	2009-10-07	de
dc.date.available	2016-03-31T08:35:51Z
dc.date.issued	1981	de
dc.date.updated	2014-09-11	de
dc.description.abstract	Thermal conductivity measurements of silicon crystals doped with Bor In have shown the presence of several phonon scattering processes. The resonant effect observed below 1 K is ascribed to the existence of a distribution of splittings N(δ) of the Γ8 ground state of the acceptor, which could be related to the presence of oxygen and carbon impurities. In two cases, the maximum of N(δ) occurs for δ max near 6 GHz, in agreement with previous ultrasonic studies.	en
dc.identifier.other	31796478X	de
dc.identifier.uri	http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-46923	de
dc.identifier.uri	http://elib.uni-stuttgart.de/handle/11682/4905
dc.identifier.uri	http://dx.doi.org/10.18419/opus-4888
dc.language.iso	en	de
dc.rights	info:eu-repo/semantics/openAccess	de
dc.subject.classification	Akzeptor <Halbleiterphysik> , Phononenemission , Silicium	de
dc.subject.ddc	530	de
dc.title	A study of the ground state of acceptors in silicon from thermal transport experiments	en
dc.type	article	de
ubs.fakultaet	Fakultät Mathematik und Physik	de
ubs.fakultaet	Fakultätsübergreifend / Sonstige Einrichtung	de
ubs.institut	1. Physikalisches Institut	de
ubs.institut	Sonstige Einrichtung	de
ubs.opusid	4692	de
ubs.publikation.source	Journal de physique 42 (1981), C6, S. 235-237	de
ubs.publikation.typ	Zeitschriftenartikel	de

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