An 18-34-GHz dynamic frequency divider based on 0.2-μm AlGaAs/GaAs/AlGaAs quantum-well transistors

dc.contributor.authorThiede, Andreasde
dc.contributor.authorBerroth, Manfredde
dc.contributor.authorNowotny, Ulrichde
dc.contributor.authorSeibel, Jörgde
dc.contributor.authorBosch, Rolandde
dc.contributor.authorKöhler, Klausde
dc.contributor.authorRaynor, Briande
dc.contributor.authorSchneider, Joachimde
dc.date.accessioned2014-05-12de
dc.date.accessioned2016-03-31T11:45:30Z
dc.date.available2014-05-12de
dc.date.available2016-03-31T11:45:30Z
dc.date.issued1993de
dc.description.abstractThe design and performance of a dynamic frequency divider was presented. This digital IC demonstrates the ability of the authors' AlGaAs/GaAs/AlGaAs quantum-well FETs with gate lengths of 0.2 μm. Stable operation was achieved in the frequency range from 18 GHz up to 34 GHz with a power consumption of 250 mW. To the authors' knowledge, this is the best result ever reported for HEMT circuits, and is similar to the frequency limit achieved by use of AlGaAs/GaAs HBTs.en
dc.identifier.other406067759de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92714de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/8226
dc.identifier.urihttp://dx.doi.org/10.18419/opus-8209
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationFrequenzteiler , Galliumarsenid-Feldeffekttransistor , HEMTde
dc.subject.ddc621.3de
dc.titleAn 18-34-GHz dynamic frequency divider based on 0.2-μm AlGaAs/GaAs/AlGaAs quantum-well transistorsen
dc.typearticlede
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.institutSonstige Einrichtungde
ubs.opusid9271de
ubs.publikation.sourceIEEE journal of solid-state circuits 28 (1993), S. 1167-1169. URL http://dx.doi.org./ 10.1109/4.245596de
ubs.publikation.typZeitschriftenartikelde

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