Linear stark coupling to the ground state of effective mass acceptors

dc.contributor.author	Köpf, Andreas	de
dc.contributor.author	Ambrosy, Anton	de
dc.contributor.author	Lassmann, Kurt	de
dc.date.accessioned	2009-10-12	de
dc.date.accessioned	2016-03-31T08:35:51Z
dc.date.available	2009-10-12	de
dc.date.available	2016-03-31T08:35:51Z
dc.date.issued	1989	de
dc.date.updated	2010-09-28	de
dc.description.abstract	It is shown by dielectric resonance absorption at 24 GHz and by ultrasonic resonance spectroscopy between 5 and 10 GHz that linear coupling of the electric field to the ground state of effective mass acceptors in Si exists and has a distinct chemical shift from B to In.	en
dc.identifier.other	317972391	de
dc.identifier.uri	http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47176	de
dc.identifier.uri	http://elib.uni-stuttgart.de/handle/11682/4910
dc.identifier.uri	http://dx.doi.org/10.18419/opus-4893
dc.language.iso	en	de
dc.rights	info:eu-repo/semantics/openAccess	de
dc.subject.classification	Akzeptor <Halbleiterphysik> , Elektrisches Feld	de
dc.subject.ddc	530	de
dc.title	Linear stark coupling to the ground state of effective mass acceptors	en
dc.type	conferenceObject	de
ubs.fakultaet	Fakultät Mathematik und Physik	de
ubs.institut	1. Physikalisches Institut	de
ubs.opusid	4717	de
ubs.publikation.source	Monemar, Bo (Hrsg.): Shallow impurities in semiconductors 1988 : proceedings of the Third International Conference held in Linköping, Sweden, 10 - 12 August 1988. Bristol : Institute of Physics, 1989 (Conference series / Institute of Physics, 95), S. 131-136	de
ubs.publikation.typ	Konferenzbeitrag	de

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