Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- &#956;m gate length quantum-well HEMT's

Wang, Zhigong; Berroth, Manfred; Nowotny, Ulrich; Ludwig, Manfred; Hofmann, Peter; Hülsmann, Axel; Köhler, Klaus; Raynor, Brian; Schneider, Joachim

Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- μm gate length quantum-well HEMT's

dc.contributor.author	Wang, Zhigong	de
dc.contributor.author	Berroth, Manfred	de
dc.contributor.author	Nowotny, Ulrich	de
dc.contributor.author	Ludwig, Manfred	de
dc.contributor.author	Hofmann, Peter	de
dc.contributor.author	Hülsmann, Axel	de
dc.contributor.author	Köhler, Klaus	de
dc.contributor.author	Raynor, Brian	de
dc.contributor.author	Schneider, Joachim	de
dc.date.accessioned	2014-04-30	de
dc.date.accessioned	2016-03-31T11:45:27Z
dc.date.available	2014-04-30	de
dc.date.available	2016-03-31T11:45:27Z
dc.date.issued	1993	de
dc.description.abstract	An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs-GaAs quantum-well high electron mobility transistors (QW HEMTs) with gate lengths of 0.3 μm has been developed. Its large signal bandwidth is 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gb/s show an opening similar to that of the input signal. Supporting material is given indicating that the LDVD might operate at bit rates up to 20 Gb/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40-mA modulation current for a laser diode with 20-Ω dynamic resistance. The power consumption is less than 500 mW.	en
dc.identifier.other	406065926	de
dc.identifier.uri	http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92389	de
dc.identifier.uri	http://elib.uni-stuttgart.de/handle/11682/8205
dc.identifier.uri	http://dx.doi.org/10.18419/opus-8188
dc.language.iso	en	de
dc.rights	info:eu-repo/semantics/openAccess	de
dc.subject.classification	Laserdiode , Halbleiterlaser , HEMT	de
dc.subject.ddc	621.3	de
dc.title	Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- μm gate length quantum-well HEMT's	en
dc.type	article	de
ubs.fakultaet	Fakultätsübergreifend / Sonstige Einrichtung	de
ubs.institut	Sonstige Einrichtung	de
ubs.opusid	9238	de
ubs.publikation.source	IEEE journal of solid-state circuits 28 (1993), S. 829-834. URL http://dx.doi.org. /10.1109/4.222183	de
ubs.publikation.typ	Zeitschriftenartikel	de