Investigation of A+-states in Si and Ge by phonon-induced conduction under uniaxial stress

dc.contributor.author	Groß, Peter	de
dc.contributor.author	Lassmann, Kurt	de
dc.date.accessioned	2009-10-12	de
dc.date.accessioned	2016-03-31T08:35:52Z
dc.date.available	2009-10-12	de
dc.date.available	2016-03-31T08:35:52Z
dc.date.issued	1993	de
dc.date.updated	2014-10-27	de
dc.description.abstract	By the analysis of the stress dependence of phonon induced conductivity (PIC) with superconducting Al-tunneling junctions as phonon generators we have now found strong evidence for a split ground state in the cases Si:Ga+, Si:Al+ and Ge:Zn+.	en
dc.identifier.other	317976311	de
dc.identifier.uri	http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-47214	de
dc.identifier.uri	http://elib.uni-stuttgart.de/handle/11682/4912
dc.identifier.uri	http://dx.doi.org/10.18419/opus-4895
dc.language.iso	en	de
dc.rights	info:eu-repo/semantics/openAccess	de
dc.subject.classification	Phononeninduzierte elektrische Leitfähigkeit , Supraleiter	de
dc.subject.ddc	530	de
dc.title	Investigation of A+-states in Si and Ge by phonon-induced conduction under uniaxial stress	en
dc.type	conferenceObject	de
ubs.fakultaet	Fakultät Mathematik und Physik	de
ubs.institut	1. Physikalisches Institut	de
ubs.opusid	4721	de
ubs.publikation.source	Meissner, Michael (Hrsg.): Proceedings of the Seventh International Conference on Phonon Scattering in Condensed Matter : Cornell University, Ithaca, New York, August 3-7, 1992. Berlin : Springer, 1993 (Springer series in solid-state sciences 12), S. 125-126	de
ubs.publikation.typ	Konferenzbeitrag	de

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