Phonon spectroscopy of low energy vibrations of interstitial oxygen in germanium

Abstract

We can summarize our results as follows: Whereas the band of lowest lying mechanical states of interstitial oxygen in Si can be approximated by a two-dimensional oscillator perturbed by a central potential, the corresponding states in Ge can be well understood by a bindered rotator with a large central potential opposing a bending oscillation and with a sixfold modulation of the rotation due to the influence of the 6 neighbours to the Ge-O-Ge molecule