Evidence for 870 GHz phonon emission from superconducting Al tunnel diodes through resonant scattering by oxygen in silicon
dc.contributor.author | Forkel, Werner | de |
dc.contributor.author | Welte, Michael | de |
dc.contributor.author | Eisenmenger, Wolfgang | de |
dc.date.accessioned | 2010-07-21 | de |
dc.date.accessioned | 2016-03-31T08:36:02Z | |
dc.date.available | 2010-07-21 | de |
dc.date.available | 2016-03-31T08:36:02Z | |
dc.date.issued | 1973 | de |
dc.date.updated | 2014-09-11 | de |
dc.description.abstract | Thin-film aluminum superconducting tunnel junctions can be used to generate phonons up to 10 12 Hz. This is substantiated by the observation of the 29-cm -1 absorption line of O 16 impurities in silicon, so far only known from infrared spectra. | en |
dc.identifier.other | 347526470 | de |
dc.identifier.uri | http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-55463 | de |
dc.identifier.uri | http://elib.uni-stuttgart.de/handle/11682/4947 | |
dc.identifier.uri | http://dx.doi.org/10.18419/opus-4930 | |
dc.language.iso | en | de |
dc.rights | info:eu-repo/semantics/openAccess | de |
dc.subject.classification | Supraleiter , Phononenemission | de |
dc.subject.ddc | 530 | de |
dc.title | Evidence for 870 GHz phonon emission from superconducting Al tunnel diodes through resonant scattering by oxygen in silicon | en |
dc.type | article | de |
ubs.fakultaet | Fakultät Mathematik und Physik | de |
ubs.institut | 1. Physikalisches Institut | de |
ubs.opusid | 5546 | de |
ubs.publikation.source | Physical review letters 31 (1973), S. 215-216. URL http://dx.doi.org./10.1103/PhysRevLett.31.215 | de |
ubs.publikation.typ | Zeitschriftenartikel | de |