18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs

dc.contributor.authorWang, Zhigongde
dc.contributor.authorNowotny, Ulrichde
dc.contributor.authorBerroth, Manfredde
dc.contributor.authorBronner, Wolfgangde
dc.contributor.authorHofmann, Peterde
dc.contributor.authorHülsmann, Axelde
dc.contributor.authorKöhler, Klausde
dc.contributor.authorRaynor, Briande
dc.contributor.authorSchneider, Joachimde
dc.date.accessioned2014-04-30de
dc.date.accessioned2016-03-31T11:45:27Z
dc.date.available2014-04-30de
dc.date.available2016-03-31T11:45:27Z
dc.date.issued1992de
dc.date.updated2014-04-30de
dc.description.abstractA monolithically integrated 2:1 multiplexer and laser diode driver was developed, using AlGaAs quantum well HEMTs of 0.3 μm gate length. The DC and modulation current is 25 and 45 mA, respectively. Open eye diagrams were measured at bit rates up to 18 Gbit/s with pseudorandom data streams.en
dc.identifier.other406058342de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92371de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/8204
dc.identifier.urihttp://dx.doi.org/10.18419/opus-8187
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationHalbleiterlaser , HEMT , Multiplexerde
dc.subject.ddc621.3de
dc.title18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTsen
dc.typearticlede
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.institutSonstige Einrichtungde
ubs.opusid9237de
ubs.publikation.sourceElectronics letters 28 (1992), S. 1724-1726. URL http://dx.doi.org./ 10.1049/el:19921096de
ubs.publikation.typZeitschriftenartikelde

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