20 Gbit/s 2:1 multiplexer using 0.3 &#956;m gate length double pulse doped quantum well GaAs/AlGaAs transistors

Nowotny, Ulrich; Lang, Manfred; Berroth, Manfred; Hurm, Volker; Hülsmann, Axel; Kaufel, Gudrun; Köhler, Klaus; Raynor, Brian; Schneider, Joachim

20 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistors

dc.contributor.author	Nowotny, Ulrich	de
dc.contributor.author	Lang, Manfred	de
dc.contributor.author	Berroth, Manfred	de
dc.contributor.author	Hurm, Volker	de
dc.contributor.author	Hülsmann, Axel	de
dc.contributor.author	Kaufel, Gudrun	de
dc.contributor.author	Köhler, Klaus	de
dc.contributor.author	Raynor, Brian	de
dc.contributor.author	Schneider, Joachim	de
dc.date.accessioned	2014-05-05	de
dc.date.accessioned	2016-03-31T11:45:28Z
dc.date.available	2014-05-05	de
dc.date.available	2016-03-31T11:45:28Z
dc.date.issued	1991	de
dc.description.abstract	A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3μm gate length. First results show a data rate of over 20 Gbit/s at 5 V supply voltage and 250 mW power consumption. The output voltage swing is adjustable between 0.3 V and 0.8 V for a 50 Ohm load. The out-put level can be varied between +1 V an -1 V. Comparison between simulation and measurement shows very good agreement.	en
dc.identifier.other	40637676X	de
dc.identifier.uri	http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92484	de
dc.identifier.uri	http://elib.uni-stuttgart.de/handle/11682/8210
dc.identifier.uri	http://dx.doi.org/10.18419/opus-8193
dc.language.iso	en	de
dc.rights	info:eu-repo/semantics/openAccess	de
dc.subject.classification	Logische Schaltung , Multiplexer , Galliumarsenid-Feldeffekttransistor	de
dc.subject.ddc	621.3	de
dc.title	20 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistors	en
dc.type	article	de
ubs.fakultaet	Fakultätsübergreifend / Sonstige Einrichtung	de
ubs.institut	Sonstige Einrichtung	de
ubs.opusid	9248	de
ubs.publikation.source	Microelectronic engineering 15 (1991), S. 323-326. URL http://dx.doi.org/10.1016/0167-9317(91)90237-8	de
ubs.publikation.typ	Zeitschriftenartikel	de