Electrons and holes in InSb under crossed magnetic and stress fields. 2, Recombination radiation

dc.contributor.authorWolfstädter, Berndde
dc.contributor.authorTrebin, Hans-Rainerde
dc.contributor.authorPascher, Haraldde
dc.contributor.authorHäfele, Hans-Georgde
dc.date.accessioned2016-01-18de
dc.date.accessioned2016-03-31T11:46:33Z
dc.date.available2016-01-18de
dc.date.available2016-03-31T11:46:33Z
dc.date.issued1988de
dc.description.abstractStimulated recombination radiation and spin-flip Raman scattering have been observed in InSb with uniaxial stress Tapplied perpendicular to a magnetic field B Tǁ[100] Bǁ[001. A k·p Hamiltonian was established within an 8 x 8 Kane model and diagonalized exactly for this particular geometry. Energy levels, transition energies, and corresponding oscillator strengths were calculated and compared to the experimental data.en
dc.identifier.other456199608de
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-104810de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/8450
dc.identifier.urihttp://dx.doi.org/10.18419/opus-8433
dc.language.isoende
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.subject.classificationHalbleiter , Magnetfeld , Raman-Effektde
dc.subject.ddc530de
dc.titleElectrons and holes in InSb under crossed magnetic and stress fields. 2, Recombination radiationen
dc.typearticlede
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.fakultaetFakultät Mathematik und Physikde
ubs.institutSonstige Einrichtungde
ubs.institutInstitut für Theoretische und Angewandte Physik (aufgelöst)de
ubs.opusid10481de
ubs.publikation.sourcePhysical review, B 37 (1988), S. 10256-10259. URL http://dx.doi.org/10.1103/PhysRevB.37.10256de
ubs.publikation.typZeitschriftenartikelde

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
tre32.pdf
Size:
6.59 MB
Format:
Adobe Portable Document Format

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1021 B
Format:
Plain Text
Description: