Spectroscopic trace of the Lifshitz transition and multivalley activation in thermoelectric SnSe under high pressure

dc.contributor.authorBiesner, Tobias
dc.contributor.authorLi, Weiwu
dc.contributor.authorTsirlin, Alexander A.
dc.contributor.authorRoh, Seulki
dc.contributor.authorWei, Pai-Chun
dc.contributor.authorUykur, Ece
dc.contributor.authorDressel, Martin
dc.date.accessioned2023-05-30T15:14:55Z
dc.date.available2023-05-30T15:14:55Z
dc.date.issued2021de
dc.date.updated2023-03-27T19:58:40Z
dc.description.abstractMultivalley systems offer not only exciting physical phenomena but also the possibility of broad utilization. Identifying an important platform and understanding its physics are paramount tasks to improve their capability for application. Here, we investigate a promising candidate, the semiconductor SnSe, by optical spectroscopy and density functional theory calculations. Upon applying pressure to lightly doped SnSe, we directly monitored the phase transition from semiconductor to semimetal. In addition, heavily doped SnSe exhibited a successive Lifshitz transition, activating multivalley physics. Our comprehensive study provides insight into the effects of pressure and doping on this system, leading to promising routes to tune the material properties for advanced device applications, including thermoelectrics and valleytronics.en
dc.description.sponsorshipBaden-Württemberg Stiftungde
dc.description.sponsorshipDeutsche Forschungsgemeinschaftde
dc.description.sponsorshipProjekt DEALde
dc.identifier.issn1884-4049
dc.identifier.issn1884-4057
dc.identifier.other1848906382
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-131077de
dc.identifier.urihttp://elib.uni-stuttgart.de/handle/11682/13107
dc.identifier.urihttp://dx.doi.org/10.18419/opus-13088
dc.language.isoende
dc.relation.uridoi:10.1038/s41427-021-00283-2de
dc.rightsinfo:eu-repo/semantics/openAccessde
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/de
dc.subject.ddc530de
dc.titleSpectroscopic trace of the Lifshitz transition and multivalley activation in thermoelectric SnSe under high pressureen
dc.typearticlede
ubs.fakultaetMathematik und Physikde
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtungde
ubs.institut1. Physikalisches Institutde
ubs.institutFakultätsübergreifend / Sonstige Einrichtungde
ubs.publikation.seiten7de
ubs.publikation.sourceNPG Asia materials 13 (2021), No. 12de
ubs.publikation.typZeitschriftenartikelde

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