Dopant-assisted stabilization of negatively charged single nitrogen-vacancy centers in phosphorus-doped diamond at low temperatures

dc.contributor.authorGeng, Jianpei
dc.contributor.authorShalomayeva, Tetyana
dc.contributor.authorGryzlova, Mariia
dc.contributor.authorMukherjee, Amlan
dc.contributor.authorSantonocito, Santo
dc.contributor.authorDzhavadzade, Dzhavid
dc.contributor.authorDasari, Durga Bhaktavatsala Rao
dc.contributor.authorKato, Hiromitsu
dc.contributor.authorStöhr, Rainer
dc.contributor.authorDenisenko, Andrej
dc.contributor.authorMizuochi, Norikazu
dc.contributor.authorWrachtrup, Jörg
dc.date.accessioned2025-05-12T06:53:58Z
dc.date.issued2023
dc.date.updated2024-11-26T08:24:41Z
dc.description.abstractCharge state instabilities have been a bottleneck for the implementation of solid-state spin systems and pose a major challenge to the development of spin-based quantum technologies. Here we investigate the stabilization of negatively charged nitrogen-vacancy (NV - ) centers in phosphorus-doped diamond at liquid helium temperatures. Photoionization of phosphorous donors in conjunction with charge diffusion at the nanoscale enhances NV 0 to NV - conversion and stabilizes the NV - charge state without the need for an additional repump laser. The phosphorus-assisted stabilization is explored and confirmed both with experiments and our theoretical model. Stable photoluminescence-excitation spectra are obtained for NV - centers created during the growth. The fluorescence is continuously recorded under resonant excitation to real-time monitor the charge state and the ionization and recombination rates are extracted from time traces. We find a linear laser power dependence of the recombination rate as opposed to the conventional quadratic dependence, which is attributed to the photo-ionization of phosphorus atoms.en
dc.description.sponsorshipJapan Society for the Promotion of Science
dc.description.sponsorshipInstitute for Chemical Research, Kyoto University
dc.description.sponsorshipBundesministerium für Bildung und Forschung
dc.identifier.issn2056-6387
dc.identifier.other1927270251
dc.identifier.urihttp://nbn-resolving.de/urn:nbn:de:bsz:93-opus-ds-163500de
dc.identifier.urihttps://elib.uni-stuttgart.de/handle/11682/16350
dc.identifier.urihttps://doi.org/10.18419/opus-16331
dc.language.isoen
dc.relationinfo:eu-repo/grantAgreement/EC/HE/101080136
dc.relation.uridoi:10.1038/s41534-023-00777-7
dc.rightsCC BY
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc530
dc.titleDopant-assisted stabilization of negatively charged single nitrogen-vacancy centers in phosphorus-doped diamond at low temperaturesen
dc.typearticle
dc.type.versionpublishedVersion
ubs.fakultaetMathematik und Physik
ubs.fakultaetFakultäts- und hochschulübergreifende Einrichtungen
ubs.fakultaetFakultätsübergreifend / Sonstige Einrichtung
ubs.institut3. Physikalisches Institut
ubs.institutZentrum für Angewandte Quantentechnologie (ZAQuant)
ubs.institutFakultätsübergreifend / Sonstige Einrichtung
ubs.publikation.seiten8
ubs.publikation.sourcenpj Quantum information 9 (2023), No. 110
ubs.publikation.typZeitschriftenartikel

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