11.6 Gbps 1:4 demultiplexer using double pulse doped quantum well GaAs/AlGaAs transistors

dc.contributor.author	Lang, Manfred	de
dc.contributor.author	Nowotny, Ulrich	de
dc.contributor.author	Berroth, Manfred	de
dc.date.accessioned	2014-05-05	de
dc.date.accessioned	2016-03-31T11:45:28Z
dc.date.available	2014-05-05	de
dc.date.available	2016-03-31T11:45:28Z
dc.date.issued	1991	de
dc.description.abstract	An ultrahigh speed 4 bit demultiplexer circuit has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3 mu m gate length. First results show a data rate of 11.6 Gbit/s and a power consumption of 165 mW at 0.85 V supply voltage, including four 50 Omega buffers.	en
dc.identifier.other	406376336	de
dc.identifier.uri	http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-92500	de
dc.identifier.uri	http://elib.uni-stuttgart.de/handle/11682/8209
dc.identifier.uri	http://dx.doi.org/10.18419/opus-8192
dc.language.iso	en	de
dc.rights	info:eu-repo/semantics/openAccess	de
dc.subject.classification	Multiplexer , Galliumarsenid-Feldeffekttransistor , Integrierte Schaltung	de
dc.subject.ddc	621.3	de
dc.title	11.6 Gbps 1:4 demultiplexer using double pulse doped quantum well GaAs/AlGaAs transistors	en
dc.type	article	de
ubs.fakultaet	Fakultätsübergreifend / Sonstige Einrichtung	de
ubs.institut	Sonstige Einrichtung	de
ubs.opusid	9250	de
ubs.publikation.source	Electronics letters 27 (1991), S. 459-460. URL http://dx.doi.org./ 10.1049/el:19910289	de
ubs.publikation.typ	Zeitschriftenartikel	de

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