15 Fakultätsübergreifend / Sonstige Einrichtung

Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/16

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1977 - 197911980 - 19862

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Institute: search.filters.UBSInstitut.1. Physikalisches InstitutPublication Type: search.filters.UBSTyp.Konferenzbeitrag

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    Influence of defects on the splitting of the acceptor ground state in silicon
    (1984) Ambrosy, Anton; Lassmann, Kurt; Goer, Anne M. de; Salce, Bernard; Zeile, Heinrich
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    Resonance and relaxation attenuation by neutral acceptors in a magnetic field
    (1977) Schad, Hanspeter; Lassmann, Kurt; Zeile, Heinrich
    Fine structure, level splitting, and relaxation times of the acceptor ground state in cubic semiconductors can be deduced from ultrasonic attenuation. By the application of a magnetic field it is possible to vary the coupling strength and the number of acceptors on speaking terms with the ultrasonic wave. Making use of this possibility, we have determined directly effective coupling constants for relaxation attenuation and the temperature dependence of the critical intensity for saturation of the resonant interaction. Results obtained for p-type GaAs and Si are discussed in comparison with analogous results for glasses.
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    Shallow traps correlated with deep impurities in silicon as obtained by phonon induced conductance
    (1986) Burger, Wilfried; Lassmann, Kurt; Holm, Claus; Wagner, Peter
    At low temperatures shallow neutral donors and acceptors in silicon can bind an extra carrier to form the so-called D- and A+ centers. With the method of phonon-induced electrical conductivity (PIC) we find the same threshold energies for the detachment of these carriers associated with the shallow impurities P and B, as have been obtained previously by FIR measurements. This shows that the detachment is by a one-phonon process. We find that there is no central cell correction for the binding to the deeper acceptors Al and Ga, whereas for In+ the binding energy is as large as 5,8 meV. We interprete this dependence on acceptor species as another example of the shallow-deep instability of the binding energy with the variation of the central cell potential.