05 Fakultät Informatik, Elektrotechnik und Informationstechnik

Permanent URI for this collectionhttps://elib.uni-stuttgart.de/handle/11682/6

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Institute: search.filters.UBSInstitut.Institut für HalbleitertechnikAuthor: search.filters.author.Augel, Lion

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    Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
    (2020) Schlykow, Viktoria; Manganelli, Costanza Lucia; Römer, Friedhard; Clausen, Caterina; Augel, Lion; Schulze, Jörg; Katzer, Jens; Schubert, Michael Andreas; Witzigmann, Bernd; Schroeder, Thomas; Capellini, Giovanni; Fischer, Inga Anita
    We report on photodetection in deep subwavelength Ge(Sn) nano-islands on Si nano-pillar substrates, in which self-aligned nano-antennas in the Al contact metal are used to enhance light absorption by means of local surface plasmon resonances. The impact of parameters such as substrate doping and device geometry on the measured responsivities are investigated and our experimental results are supported by simulations of the three-dimensional distribution of the electromagnetic fields. Comparatively high optical responsivities of about 0.1 A W-1 are observed as a consequence of the excitation of localized surface plasmons, making our nano-island photodetectors interesting for applications in which size reduction is essential.
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    Plasmonische Strukturen auf Ge-Photodioden zur Integration von kollinearen Biosensoren
    (2019) Augel, Lion; Schulze, Jörg (Prof. Dr. habil.)
    Die Arbeit betrachtet unterschiedliche integrierte kollineare refraktive plasmonische Sensoren auf der Basis von Ge-Photodioden. Die plasmonischen Strukturen werden dabei in silizium-kompatibler Technologie direkt auf der Photodiode realisiert. Anhand des Herstellungsablaufs und elektro-optischer Messungen wird die Eignung der einzelnen Konzepte hinsichtlich der Anwendbarkeit in der refraktiven Biosensorik diskutiert.
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    Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
    (2021) Augel, Lion; Schlipf, Jon; Bullert, Sergej; Bürzele, Sebastian; Schulze, Jörg; Fischer, Inga A.
    Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.